Miniaturized Transistors |
Autore | Grasser Tibor |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (202 p.) |
Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
ISBN | 3-03921-011-4 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346680003321 |
Grasser Tibor | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Thin Film Transistor |
Autore | Horng Ray-Hua |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (108 p.) |
Soggetto non controllato |
charge transport and injection mechanisms
optical synaptic devices flat panel displays simulation persistent photoconductivity hydrogen interdigitated interface state trap density technology computer aided design (TCAD) oxygen defects Corbino transistor model evaluation metal-halide lamp InGaZnOx contact resistances chemical treatment colour difference organic transistor equivalent circuit channel-length dependence just noticeable difference oxide semiconductor OTFT chromaticity modeling contact effects oxygen deficiency dual-threshold inverter surface treated charge-carrier-mobility extraction optical detecting thin film transistor green photo-sensors modelling capacitor TFT-LCD organic thin-film transistor spectrum hydrogen effect organic film growth transparent conducting oxides quartz-halogen lamp optical blue LED |
ISBN | 3-03921-527-2 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910674373403321 |
Horng Ray-Hua | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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