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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications
| Memristors for Neuromorphic Circuits and Artificial Intelligence Applications |
| Autore | Suñé Jordi |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (244 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
AI
artificial intelligence artificial neural network artificial synapse autocovariance boost-factor adjustment character recognition circuit design compact model cortical neurons crossbar array deep learning networks defect-tolerant spatial pooling electronic synapses emulator Flash memories graphene oxide hardware-based deep learning ICs hierarchical temporal memory laser memristive devices memristor memristor crossbar memristor-CMOS hybrid circuit memristors multiscale modeling neocortex neural network hardware neural networks neuromorphic neuromorphic computing neuromorphic engineering neuromorphic hardware neuromorphic systems neuromorphics optimization OxRAM pattern recognition pavlov reinforcement learning resistive switching RRAM self-organization maps sensory and hippocampal responses simulation spike-timing-dependent plasticity spiking neural network spiking neural networks STDP strongly correlated oxides synapse synaptic device synaptic plasticity synaptic weight temporal pooling time series modeling transistor-like devices variability vertical RRAM wire resistance |
| ISBN | 3-03928-577-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090703321 |
Suñé Jordi
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu
| Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN |
9783039212262
3039212265 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
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Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Semiconductor Memory Devices for Hardware-Driven Neuromorphic Systems
| Semiconductor Memory Devices for Hardware-Driven Neuromorphic Systems |
| Autore | Cho Seongjae |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (81 p.) |
| Soggetto topico |
Energy industries & utilities
Technology: general issues |
| Soggetto non controllato |
3-D neuromorphic system
3-D stacked synapse array a-IGZO memristor benchmarking neuromorphic HW bimodal distribution of effective Schottky barrier height Boyer-Moore charge-trap flash synapse DNA matching algorithm energy consumption flexible electronics gradual and abrupt modulation hardware-based neuromorphic system ionized oxygen vacancy leaky integrate-and-fire neuron MPI for neuromorphic HW neural network neuromorphic engineering neuromorphic platform neuromorphic system non filamentary resistive switching on-chip learning organic field-effect transistors overlapping pattern issue pattern recognition Schottky barrier tunneling short-term plasticity Si processing compatibility spiking neural network spinMPI spiNNaker synaptic device synaptic devices TCAD device simulation vanadium dioxide |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557566603321 |
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Cho Seongjae
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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