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Optoelectronic Materials, Devices, and Applications
| Optoelectronic Materials, Devices, and Applications |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2023 |
| Descrizione fisica | 1 online resource (136 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
3D printing
adhesive force measurement AFM Ag nanoparticles automatic target recognition (ATR) BaGa4Se7 collision model doping dynamic characteristics early enamel caries elastic characteristics elastic recovery coefficient electric field strength electrochemical migration impedance characteristics InGaN/GaN multiple quantum well (MQW) ionic migration kinematics mass transfer micro-LED arrays mid-infrared n/a nanosilver optical coherence tomography optical parametric oscillator photoluminescence (PL) photonic crystal waveguide photothermal spectroscopy pooling quantitative assessment quantitative indicators Raman shift reliability response surface method semiconductors sintering sparse representation spatial pyramid matching (SPM) static characteristics strain relaxation surface defects synthetic aperture radar (SAR) images terahertz three-electrode planar spark gap high voltage switch μLED |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910743279203321 |
| MDPI - Multidisciplinary Digital Publishing Institute, 2023 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||