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Radiation Tolerant Electronics
| Radiation Tolerant Electronics |
| Autore | Leroux Paul |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto non controllato |
single event effects
radiation-hardening-by-design (RHBD) frequency divider by two single event upset Image processing CMOS analog integrated circuits FPGA total ionizing dose (TID) Impulse Sensitive Function soft error hardening by design radiation hardening by design X-rays Single-Event Upsets (SEUs) line buffer heavy ions VHDL FPGA-based digital controller radiation hardening by design (RHBD) radiation hardening SRAM-based FPGA proton irradiation ring oscillator sensor readout IC fault tolerance space application physical unclonable function voltage controlled oscillator (VCO) Ring Oscillators analog single-event transient (ASET) single event opset (SEU) SEB single event upsets bipolar transistor total ionizing dose protons triple modular redundancy (TMR) gain degradation space electronics saturation effect configuration memory Co-60 gamma radiation total ionization dose (TID) frequency synthesizers CMOS PLL TDC single-event upsets (SEUs) bandgap voltage reference (BGR) 4MR single-shot error rates Radiation Hardening by Design soft errors heavy-ions single-event effects (SEE) single event transient (SET) SEE testing proton irradiation effects RFIC single event upset (SEU) FMR ionization radiation tolerant triplex-duplex neutron irradiation effects digital integrated circuits single event gate rupture (SEGR) power MOSFETs ring-oscillator selective hardening voltage reference nuclear fusion TMR gamma-rays gamma ray instrumentation amplifier radiation effects reference circuits radiation-hardened |
| ISBN | 3-03921-280-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910367565203321 |
Leroux Paul
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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The Modifications of Metallic and Inorganic Materials by Using Energetic Ion/Electron Beams
| The Modifications of Metallic and Inorganic Materials by Using Energetic Ion/Electron Beams |
| Autore | Iwase Akihiro |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (280 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
swift heavy ion
YAG (Y3Al5O12) refractive index profiling synergy effect optical waveguide hillocks ion tracks ion irradiation TEM vanadium alloy irradiation hardening radiation damage electron irradiation metal surface sputtering groove hole self-organization pattern laser photocathode pulsed electron sources pulsed transmission electron microscope ion beam copper oxide chromatic change photoemission spectrum beam viewer light water reactor zirconium alloys nuclear fuel cladding thermal desorption spectroscopy transmission electron microscopy high energy irradiation ion track overlapping oxides Monte Carlo simulation for two-dimensional images lattice structures and magnetic states binomial and Poisson distribution functions ion accelerators at WERC irradiation effects on space electronics single event total ionization dose displacement damage solar cell space application irradiation test beam condition degradation standardization ISO high-Tc superconductors critical current density flux pinning heavy-ion irradiation columnar defects anisotropy superconductor irradiation critical current cerium oxide CeO2 swift heavy ions phase transition partially stabilized zirconia XRD radiation simulation ion-track etching electrodeposition micro/nano-sized metal cones template synthesis electrocatalyst excited reaction field transmission electron microscope nanomaterials manipulation nanostructure Al Al2O3 accelerator-driven system (ADS) liquid metal corrosion (LMC) lead-bismuth eutectic (LBE) self-ion irradiation oxygen concentration in LBE irradiation effect on corrosion behavior electronic excitation lattice disordering electron-lattice coupling nanopore structure ceria molecular dynamics simulation structural analysis defects |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620603321 |
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Iwase Akihiro
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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