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Radiation Tolerant Electronics / Paul Leroux
| Radiation Tolerant Electronics / Paul Leroux |
| Autore | Leroux Paul |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
single event effects
radiation-hardening-by-design (RHBD) frequency divider by two single event upset Image processing CMOS analog integrated circuits FPGA total ionizing dose (TID) Impulse Sensitive Function soft error hardening by design radiation hardening by design X-rays Single-Event Upsets (SEUs) line buffer heavy ions VHDL FPGA-based digital controller radiation hardening by design (RHBD) radiation hardening SRAM-based FPGA proton irradiation ring oscillator sensor readout IC fault tolerance space application physical unclonable function voltage controlled oscillator (VCO) Ring Oscillators analog single-event transient (ASET) single event opset (SEU) SEB single event upsets bipolar transistor total ionizing dose protons triple modular redundancy (TMR) gain degradation space electronics saturation effect configuration memory Co-60 gamma radiation total ionization dose (TID) frequency synthesizers CMOS PLL TDC single-event upsets (SEUs) bandgap voltage reference (BGR) 4MR single-shot error rates Radiation Hardening by Design soft errors heavy-ions single-event effects (SEE) single event transient (SET) SEE testing proton irradiation effects RFIC single event upset (SEU) FMR ionization radiation tolerant triplex-duplex neutron irradiation effects digital integrated circuits single event gate rupture (SEGR) power MOSFETs ring-oscillator selective hardening voltage reference nuclear fusion TMR gamma-rays gamma ray instrumentation amplifier radiation effects reference circuits radiation-hardened |
| ISBN |
9783039212804
303921280X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910367565203321 |
Leroux Paul
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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The Modifications of Metallic and Inorganic Materials by Using Energetic Ion/Electron Beams
| The Modifications of Metallic and Inorganic Materials by Using Energetic Ion/Electron Beams |
| Autore | Iwase Akihiro |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (280 p.) |
| Soggetto topico | Research and information: general |
| Soggetto non controllato |
accelerator-driven system (ADS)
Al Al2O3 anisotropy beam condition beam viewer binomial and Poisson distribution functions CeO2 ceria cerium oxide chromatic change columnar defects copper oxide critical current critical current density defects degradation displacement damage electrocatalyst electrodeposition electron irradiation electron-lattice coupling electronic excitation excited reaction field flux pinning groove heavy-ion irradiation high energy irradiation high-Tc superconductors hillocks hole ion accelerators at WERC ion beam ion irradiation ion track overlapping ion tracks ion-track etching irradiation irradiation effect on corrosion behavior irradiation effects on space electronics irradiation hardening irradiation test ISO laser photocathode lattice disordering lattice structures and magnetic states lead-bismuth eutectic (LBE) light water reactor liquid metal corrosion (LMC) manipulation metal surface micro/nano-sized metal cones molecular dynamics Monte Carlo simulation for two-dimensional images n/a nanomaterials nanopore structure nanostructure nuclear fuel cladding optical waveguide oxides oxygen concentration in LBE partially stabilized zirconia pattern phase transition photoemission spectrum pulsed electron sources pulsed transmission electron microscope radiation damage radiation simulation refractive index profiling self-ion irradiation self-organization simulation single event solar cell space application sputtering standardization structural analysis superconductor swift heavy ion swift heavy ions synergy effect TEM template synthesis thermal desorption spectroscopy total ionization dose transmission electron microscope transmission electron microscopy vanadium alloy XRD YAG (Y3Al5O12) zirconium alloys |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620603321 |
|
Iwase Akihiro
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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