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Solution Synthesis, Processing, and Applications of Semiconducting Nanomaterials
| Solution Synthesis, Processing, and Applications of Semiconducting Nanomaterials |
| Autore | Hsu Julia W. P |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (156 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
copper
copper nitride photo sintering ink paste printed electronics post-processing Cu2ZnSnS4 solar cell ball milling nano-ink annealing tin monoxide nanoshell ammonia sensor solution method CMZTSSe films sol-gel electrical properties optical properties selenization treatment solar cells oxygen reduction reaction nanocatalysts carbon nanotube wet-chemical reduction method Au-clusters mass activity resistance switching high/low resistance oxygen defect conduction mechanism BNSL superlattice self-assembly colloidal nanocrystal binary nanocrystal superlattice electrospinning CuCrO2 hollow nanotube Al2O3 template one-dimensional structures IGZO composition solution combustion synthesis transparent amorphous semiconductor oxides low voltage operation Mg doped CuCrO2 hole transport layer organic solar cells perovskite solar cells |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557463703321 |
Hsu Julia W. P
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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