Electrical and Electro-Optical Biosensors |
Autore | Lee Mon-Juan |
Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
Descrizione fisica | 1 electronic resource (152 p.) |
Soggetto topico |
Research & information: general
Biology, life sciences Biochemistry |
Soggetto non controllato |
printed circuit board
sensor electrode electrochemical sensor printed biosensors printing technologies electrochemistry point-of-care ovarian cancer nanowire biosensor nanowire silicon-on-insulator CA 125 antibodies liquid crystal photopolymer UV exposure bovine serum albumin protein assay dielectric spectroscopy lyotropic chromonic liquid crystal label-free biosensor optical biosensor immunoassay transmission spectrometry spoof localized surface plasmon polariton sensor glucose solution millimeter wave metamaterial spin-coating single-substrate cancer biomarker CA125 dengue virus dengue serotype mosquito-borne viral disease virus detection electrochemical impedance spectroscopy cancer cells dielectrophoresis crossover frequency electrical impedance spectroscopy |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910674051003321 |
Lee Mon-Juan
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Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
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Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors |
Autore | Grasser Tibor |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (202 p.) |
Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
ISBN | 3-03921-011-4 |
Formato | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346680003321 |
Grasser Tibor
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MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
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Lo trovi qui: Univ. Federico II | ||
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