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Flash Memory Devices
| Flash Memory Devices |
| Autore | Zambelli Cristian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (144 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
3D flash memory
3D NAND Flash 3D NAND Flash memories 3D NAND flash memory aluminum oxide artificial neural network dipole disturbance effective work function endurance erase performance error correction code Flash memory reliability flash signal processing garbage collection high-k high-κ interfacial reaction interference metal gate MHONOS n/a NAND flash memory non-volatile memory (NVM) nonvolatile charge-trapping memory NOR flash memory performance cliff program random telegraph noise randomization scheme raw bit error RBER read disturb reliability retention characteristic SiO2 solid-state drives stack engineering support vector machine tail latency Technology Computer Aided Design (TCAD) simulation temperature test platform work function |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557617103321 |
Zambelli Cristian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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High-Density Solid-State Memory Devices and Technologies
| High-Density Solid-State Memory Devices and Technologies |
| Autore | Monzio Compagnoni Christian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (210 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
3D NAND
3D NAND Flash array test pattern artificial intelligence artificial neural networks bandwidth BBCube bumpless charge-trap cell CMOS under array CoFeB composite free layer COW crosspoint array deep learning dielectric endurance evaluation method floating gate cell in-memory computing low power electronics low-frequency noise MOSFET n/a NAND Flash memory neuromorphic computing NOR Flash memory arrays oxide trapped charge phonon power consumption power spectrum program noise program suspend pulse-width modulation random telegraph noise reliability resistive switching memory RTN Solid State Drives spectral index spintronics STT-MRAM surface roughness TAT thermal management transient analysis TSV Wiener-Khinchin WOW yield |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566470403321 |
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Monzio Compagnoni Christian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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