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Flash Memory Devices
Flash Memory Devices
Autore Zambelli Cristian
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (144 p.)
Soggetto topico Technology: general issues
Soggetto non controllato retention characteristic
high-κ
nonvolatile charge-trapping memory
stack engineering
NOR flash memory
aluminum oxide
NAND flash memory
interference
Technology Computer Aided Design (TCAD) simulation
disturbance
program
non-volatile memory (NVM)
3D NAND Flash memories
random telegraph noise
Flash memory reliability
test platform
endurance
support vector machine
raw bit error
3D NAND Flash
RBER
reliability
flash signal processing
randomization scheme
solid-state drives
3D flash memory
performance cliff
tail latency
garbage collection
artificial neural network
error correction code
work function
effective work function
dipole
metal gate
high-k
SiO2
interfacial reaction
MHONOS
erase performance
3D NAND flash memory
temperature
read disturb
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557617103321
Zambelli Cristian  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
High-Density Solid-State Memory Devices and Technologies
High-Density Solid-State Memory Devices and Technologies
Autore Monzio Compagnoni Christian
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (210 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Soggetto non controllato resistive switching memory
in-memory computing
crosspoint array
artificial intelligence
deep learning
dielectric
RTN
TAT
Wiener-Khinchin
transient analysis
phonon
surface roughness
spectral index
power spectrum
program suspend
3D NAND Flash
Solid State Drives
MOSFET
low-frequency noise
random telegraph noise
evaluation method
array test pattern
STT-MRAM
spintronics
CoFeB
composite free layer
low power electronics
NAND Flash memory
endurance
reliability
oxide trapped charge
artificial neural networks
neuromorphic computing
NOR Flash memory arrays
program noise
pulse-width modulation
3D NAND
floating gate cell
charge-trap cell
CMOS under array
bumpless
TSV
WOW
COW
BBCube
bandwidth
yield
power consumption
thermal management
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910566470403321
Monzio Compagnoni Christian  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (352 p.)
Soggetto topico Research & information: general
Mathematics & science
Soggetto non controllato FinFETs
CMOS
device processing
integrated circuits
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
solid state circuit breaker (SSCB)
prototype
circuit design
GaN
HEMT
high gate
multi-recessed buffer
power density
power-added efficiency
4H-SiC
MESFET
IMRD structure
power added efficiency
1200 V SiC MOSFET
body diode
surge reliability
silvaco simulation
floating gate transistor
control gate
CMOS device
active noise control
vacuum channel
mean free path
vertical air-channel diode
vertical transistor
field emission
particle trajectory model
F-N plot
space-charge-limited currents
4H-SiC MESFET
simulation
power added efficiency (PAE)
new device
three-input transistor
T-channel
compact circuit style
CMOS compatible technology
avalanche photodiode
SPICE model
bandwidth
high responsivity
silicon photodiode
AlGaN/GaN HEMTs
thermal simulation
transient channel temperature
pulse width
gate structures
band-to-band tunnelling (BTBT)
tunnelling field-effect transistor (TFET)
germanium-around-source gate-all-around TFET (GAS GAA TFET)
average subthreshold swing
direct source-to-drain tunneling
transport effective mass
confinement effective mass
multi-subband ensemble Monte Carlo
non-equilibrium Green's function
DGSOI
FinFET
core-insulator
gate-all-around
field effect transistor
GAA
nanowire
one-transistor dynamic random-access memory (1T-DRAM)
polysilicon
grain boundary
electron trapping
flexible transistors
polymers
metal oxides
nanocomposites
dielectrics
active layers
nanotransistor
quantum transport
Landauer-Büttiker formalism
R-matrix method
nanoscale
mosfet
quantum current
surface transfer doping
2D hole gas (2DHG)
diamond
MoO3
V2O5
MOSFET
reliability
random telegraph noise
oxide defects
SiO2
split-gate trench power MOSFET
multiple epitaxial layers
specific on-resistance
device reliability
nanoscale transistor
bias temperature instabilities (BTI)
defects
single-defect spectroscopy
non-radiative multiphonon (NMP) model
time-dependent defect spectroscopy
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui