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Radiation Tolerant Electronics
| Radiation Tolerant Electronics |
| Autore | Leroux Paul |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto non controllato |
single event effects
radiation-hardening-by-design (RHBD) frequency divider by two single event upset Image processing CMOS analog integrated circuits FPGA total ionizing dose (TID) Impulse Sensitive Function soft error hardening by design radiation hardening by design X-rays Single-Event Upsets (SEUs) line buffer heavy ions VHDL FPGA-based digital controller radiation hardening by design (RHBD) radiation hardening SRAM-based FPGA proton irradiation ring oscillator sensor readout IC fault tolerance space application physical unclonable function voltage controlled oscillator (VCO) Ring Oscillators analog single-event transient (ASET) single event opset (SEU) SEB single event upsets bipolar transistor total ionizing dose protons triple modular redundancy (TMR) gain degradation space electronics saturation effect configuration memory Co-60 gamma radiation total ionization dose (TID) frequency synthesizers CMOS PLL TDC single-event upsets (SEUs) bandgap voltage reference (BGR) 4MR single-shot error rates Radiation Hardening by Design soft errors heavy-ions single-event effects (SEE) single event transient (SET) SEE testing proton irradiation effects RFIC single event upset (SEU) FMR ionization radiation tolerant triplex-duplex neutron irradiation effects digital integrated circuits single event gate rupture (SEGR) power MOSFETs ring-oscillator selective hardening voltage reference nuclear fusion TMR gamma-rays gamma ray instrumentation amplifier radiation effects reference circuits radiation-hardened |
| ISBN | 3-03921-280-X |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910367565203321 |
Leroux Paul
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||