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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
| AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
| Autore | Kühn Jutta |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2011 |
| Descrizione fisica | 1 electronic resource (XI, 230 pages) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto non controllato |
MMIC design
power amplifier AlGaN/GaN HEMT X-band power-added efficiency |
| ISBN | 1000021579 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346908503321 |
Kühn Jutta
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| KIT Scientific Publishing, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifiers
| Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifiers |
| Autore | Pahl Kai-Philipp Walter |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2015 |
| Descrizione fisica | 1 electronic resource (XVIII, 211 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto non controllato |
power amplifier
Leistungsteiler Impedanztransformator power divider/combiner millimeter-wave Millimeterwellentechnik Leistungsverstärker Monolitische Integrierte Millimeterwellenschaltung (MMIC)Impedance transformer Monolithic Millimeter-wave Integrated Circuit (MMIC) |
| ISBN | 1000048002 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346778703321 |
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Pahl Kai-Philipp Walter
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| KIT Scientific Publishing, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Imaging Sensors and Applications
| Imaging Sensors and Applications |
| Autore | Lee Changho |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (350 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
fluorescence LiDAR
laser-induced fluorescence vegetation monitoring classification discrimination 3D measurement fringe projection 3D Fourier transform phase unwrapping phase measurement ultrasound photoacoustic imaging photoacoustic microscopy biomedical imaging multifocal point transducer wave patterns analytical model directivity pattern guided wave (GW) non-destructive testing (NDT) macro-fiber composite (MFC) transducer elastography soft tissue nonlinearity viscoelasticity acoustic emission hydrogel nanosilica transcranial skull bone aberration photoacoustic distortion brain imaging balloon catheter image guiding medical diagnostic imaging ultrasonic imaging abdominal ultrasound plane wave imaging diverging wave imaging synthetic focusing back muscle stiffness spine elasticity shear-wave elastography (SWE) tissue ultrasound palpation system (TUPS) reliability Young's modulus carfilzomib peripheral vasculature quantitative analysis transrectal probe optical lens ultrasound imaging prostate cancer optical coherence tomography quad-scanner scanning strategy whole-directional scanning full-directional imaging IoT remote control remote operation remote sharing economy research equipment sharing two-photon laser scanning microscopy MQTT deep learning ensemble learning brain tumor classification machine learning transfer learning around view monitoring system automatic camera calibration vision-based advanced driver assistance systems high-frequency ultrasound ophthalmic imaging synthetic aperture convex array transducer bandwidth expander ultrasound transducer device power amplifier super-resolution clinical applications |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557751503321 |
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Lee Changho
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
| Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich |
| Autore | Diebold Sebastian |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2013 |
| Descrizione fisica | 1 electronic resource (XIII, 217 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto non controllato |
power amplifier
III-V semiconductor HEMT millimetre-wave koplanarer Wellenleiter monolithic integrated mHEMT Verbindungshalbleiter Mikrostreifenleitung coplanar waveguide FETmillimeterwave Terahertz microstrip transmission line 3-5 MMIC Leistungsverstärker Millimeterwelle |
| ISBN | 1000037898 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | ger |
| Record Nr. | UNINA-9910347055603321 |
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Diebold Sebastian
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| KIT Scientific Publishing, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN
high-electron-mobility transistor (HEMT) ultra-wide band gap GaN-based vertical-cavity surface-emitting laser (VCSEL) composition-graded AlxGa1−xN electron blocking layer (EBL) electron leakage GaN laser diode distributed feedback (DFB) surface gratings sidewall gratings AlGaN/GaN proton irradiation time-dependent dielectric breakdown (TDDB) reliability normally off power cycle test SiC micro-heater chip direct bonded copper (DBC) substrate Ag sinter paste wide band-gap (WBG) thermal resistance amorphous InGaZnO thin-film transistor nitrogen-doping buried-channel stability 4H-SiC turn-off loss ON-state voltage breakdown voltage (BV) IGBT wide-bandgap semiconductor high electron mobility transistors vertical gate structure normally-off operation gallium nitride asymmetric multiple quantum wells barrier thickness InGaN laser diodes optical absorption loss electron leakage current wide band gap semiconductors numerical simulation terahertz Gunn diode grooved-anode diode Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) vertical breakdown voltage buffer trapping effect gallium nitride (GaN) power switching device active power filter (APF) power quality (PQ) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) recessed gate double barrier high-electron-mobility transistors copper metallization millimeter wave wide bandgap semiconductors flexible devices silver nanoring silver nanowire polyol method cosolvent tungsten trioxide film spin coating optical band gap morphology electrochromism self-align hierarchical nanostructures ZnO nanorod/NiO nanosheet photon extraction efficiency photonic emitter wideband HEMT power amplifier jammer system GaN 5G high electron mobility transistors (HEMT) new radio RF front-end AESA radars transmittance distortions optimization GaN-on-GaN schottky barrier diodes high-energy α-particle detection low voltage thick depletion width detectors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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