Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
| AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications |
| Autore | Kühn Jutta |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2011 |
| Descrizione fisica | 1 online resource (XI, 230 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN/GaN HEMT
MMIC design power amplifier power-added efficiency X-band |
| ISBN | 1000021579 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346908503321 |
Kühn Jutta
|
||
| KIT Scientific Publishing, 2011 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifiers
| Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifiers |
| Autore | Pahl Kai-Philipp Walter |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2015 |
| Descrizione fisica | 1 online resource (XVIII, 211 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
Impedanztransformator
Leistungsteiler Leistungsverstärker millimeter-wave Millimeterwellentechnik Monolithic Millimeter-wave Integrated Circuit (MMIC) Monolitische Integrierte Millimeterwellenschaltung (MMIC)Impedance transformer power amplifier power divider/combiner |
| ISBN | 1000048002 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346778703321 |
|
Pahl Kai-Philipp Walter
|
||
| KIT Scientific Publishing, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Imaging Sensors and Applications
| Imaging Sensors and Applications |
| Autore | Lee Changho |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (350 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
3D Fourier transform
3D measurement abdominal ultrasound aberration acoustic emission analytical model around view monitoring system automatic camera calibration back muscle stiffness balloon catheter bandwidth expander biomedical imaging brain imaging brain tumor classification carfilzomib classification discrimination clinical applications convex array transducer deep learning directivity pattern distortion diverging wave imaging elasticity elastography ensemble learning fluorescence LiDAR fringe projection full-directional imaging guided wave (GW) high-frequency ultrasound hydrogel image guiding IoT laser-induced fluorescence machine learning macro-fiber composite (MFC) medical diagnostic imaging MQTT multifocal point transducer n/a nanosilica non-destructive testing (NDT) nonlinearity ophthalmic imaging optical coherence tomography optical lens peripheral vasculature phase measurement phase unwrapping photoacoustic photoacoustic imaging photoacoustic microscopy plane wave imaging power amplifier prostate cancer quad-scanner scanning strategy quantitative analysis reliability remote control remote operation remote sharing economy research equipment sharing shear-wave elastography (SWE) skull bone soft tissue spine super-resolution synthetic aperture synthetic focusing tissue ultrasound palpation system (TUPS) transcranial transducer transfer learning transrectal probe two-photon laser scanning microscopy ultrasonic imaging ultrasound ultrasound imaging ultrasound transducer device vegetation monitoring viscoelasticity vision-based advanced driver assistance systems wave patterns whole-directional scanning Young's modulus |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557751503321 |
|
Lee Changho
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
| Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich |
| Autore | Diebold Sebastian |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2013 |
| Descrizione fisica | 1 online resource (XIII, 217 p. p.) |
| Collana | Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
3-5
coplanar waveguide FETmillimeterwave HEMT III-V semiconductor koplanarer Wellenleiter Leistungsverstärker mHEMT microstrip transmission line Mikrostreifenleitung Millimeterwelle millimetre-wave MMIC monolithic integrated power amplifier Terahertz Verbindungshalbleiter |
| ISBN | 1000037898 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | ger |
| Record Nr. | UNINA-9910347055603321 |
|
Diebold Sebastian
|
||
| KIT Scientific Publishing, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
4H-SiC
active power filter (APF) AESA radars Ag sinter paste AlGaN/GaN amorphous InGaZnO asymmetric multiple quantum wells barrier thickness breakdown voltage (BV) buffer trapping effect buried-channel composition-graded AlxGa1−xN electron blocking layer (EBL) copper metallization cosolvent direct bonded copper (DBC) substrate distortions distributed feedback (DFB) double barrier electrochromism electron leakage electron leakage current flexible devices gallium nitride gallium nitride (GaN) Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GaN GaN 5G GaN laser diode GaN-based vertical-cavity surface-emitting laser (VCSEL) GaN-on-GaN grooved-anode diode HEMT hierarchical nanostructures high electron mobility transistors high electron mobility transistors (HEMT) high-electron-mobility transistor (HEMT) high-electron-mobility transistors high-energy α-particle detection IGBT InGaN laser diodes jammer system low voltage metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) millimeter wave morphology n/a new radio nitrogen-doping normally off normally-off operation numerical simulation ON-state voltage optical absorption loss optical band gap optimization photon extraction efficiency photonic emitter polyol method power amplifier power cycle test power quality (PQ) power switching device proton irradiation recessed gate reliability RF front-end schottky barrier diodes self-align SiC micro-heater chip sidewall gratings silver nanoring silver nanowire spin coating stability surface gratings terahertz Gunn diode thermal resistance thick depletion width detectors thin-film transistor time-dependent dielectric breakdown (TDDB) transmittance tungsten trioxide film turn-off loss ultra-wide band gap vertical breakdown voltage vertical gate structure wide band gap semiconductors wide band-gap (WBG) wide bandgap semiconductors wide-bandgap semiconductor wideband ZnO nanorod/NiO nanosheet |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
|
Medjdoub Farid
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
|
Seo Jung-Hun
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||