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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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