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Applications of Finite Element Modeling for Mechanical and Mechatronic Systems
| Applications of Finite Element Modeling for Mechanical and Mechatronic Systems |
| Autore | Krawczuk Marek |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (392 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
numerical modeling
finite volumne method underground coal mine endogenous fires spontaneous combustion longwall ventilation system shot peening quantitative description of peening coverage high peening coverage Almen intensity residual compressive stress hybrid composite damage aramid fiber carbon fiber finite element method delamination cut bar method thermal conductivity steady-state heat lakes finite element modeling aluminum conductor steel-reinforced cable bend deformation stress friction coefficient wind loads fatigue fracture FEM SFEM active periodic structures smart materials PCHE misalignment channel utilization factor torsion springs FEA NURBS applied load local behaviors drill pipe joint design sealing properties experiment bias tire textile cord shrinkage rubber inflation analysis nondestructive inspection crack detection low loading surface profile turbine blade finite element analysis swingarm single-sided Finite Elements Analysis (FEA) three-wheel motorcycle topology optimization collision modeling mechanical parameters contact detection web deformation strain deviation design of experiment roll-to-roll process solid mechanics finite elements hp-adaptivity numerical locking detection assessment resolution equilibrated residual method sensitivity analysis p-enrichment bell crank natural frequency reverse engineering vibrometer Abaqus numerical simulation biomechanics head injury safety injury criteria disability driver HALE UAV generative modelling thin-layer composite structure electro-mechanical systems piezoelectrics hierarchical models first-order models transition models hpq/hp-approximations adaptivity stress gradients convergence damage detection |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557596503321 |
Krawczuk Marek
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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