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Applications of Finite Element Modeling for Mechanical and Mechatronic Systems
| Applications of Finite Element Modeling for Mechanical and Mechatronic Systems |
| Autore | Krawczuk Marek |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (392 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
Abaqus
active periodic structures adaptivity Almen intensity aluminum conductor steel-reinforced cable applied load aramid fiber assessment bell crank bend deformation bias tire biomechanics carbon fiber channel collision modeling contact detection convergence crack detection cut bar method damage damage detection delamination design design of experiment detection disability drill pipe joint driver electro-mechanical systems endogenous fires equilibrated residual method experiment fatigue fracture FEA FEM finite element analysis finite element method finite element modeling finite elements Finite Elements Analysis (FEA) finite volumne method first-order models friction coefficient generative modelling HALE UAV head injury heat lakes hierarchical models high peening coverage hp-adaptivity hpq/hp-approximations hybrid composite inflation analysis injury criteria local behaviors longwall low loading mechanical parameters misalignment natural frequency nondestructive inspection numerical locking numerical modeling numerical simulation NURBS p-enrichment PCHE piezoelectrics quantitative description of peening coverage residual compressive stress resolution reverse engineering roll-to-roll process rubber safety sealing properties sensitivity analysis SFEM shot peening shrinkage single-sided smart materials solid mechanics spontaneous combustion steady-state strain deviation stress stress gradients surface profile swingarm textile cord thermal conductivity thin-layer composite structure three-wheel motorcycle topology optimization torsion springs transition models turbine blade underground coal mine utilization factor ventilation system vibrometer web deformation wind loads |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557596503321 |
Krawczuk Marek
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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