Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
High-Speed, Low-Power and Mid-IR Silicon Photonics Applications
| High-Speed, Low-Power and Mid-IR Silicon Photonics Applications |
| Autore | Alloatti Luca |
| Pubbl/distr/stampa | KIT Scientific Publishing, 2013 |
| Descrizione fisica | 1 electronic resource (X, 92 p. p.) |
| Collana | Karlsruhe Series in Photonics and Communications / Karlsruhe Institute of Technology, Institute of Photonics and Quantum Electronics (IPQ) |
| Soggetto non controllato |
optical absorption
high-speed modulators mid-IR Silicon photonics liquid crystals |
| ISBN | 1000035591 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346721803321 |
Alloatti Luca
|
||
| KIT Scientific Publishing, 2013 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Pressure-Induced Phase Transformations
| Pressure-Induced Phase Transformations |
| Autore | Errandonea Daniel |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (224 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
vanadate
zircon high pressure band gap phase transition optical absorption benzene phase I homogeneous melting Ostwald’s step rule molecular dynamics simulation metastable phase melting transition Fe electrical resistivity thermal conductivity heat flow thermal and chemical convection sesquioxides phase transitions Laue diffraction mechanisms of phase transitions reactivity tungsten rhenium carbon dioxide carbonates high-pressure high-temperature experiments quantum spin liquids frustrated magnets quantum phase transitions high-pressure measurements phase diagram quantum molecular dynamics melting curve Z methodology multi-phase materials epsomite dehydration reaction Raman spectra electrical conductivity high-pressure phase transitions molecular crystals computational methods DFT and Force Field methods energy calculations intermolecular interactions Landau theory nonlinear elasticity theory perovskites fullerenes polymerization pressure-induced Raman infrared laser laser-heated diamond anvil cell synchrotron radiation extreme conditions |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557286903321 |
|
Errandonea Daniel
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Titanium Dioxide Photocatalysis
| Titanium Dioxide Photocatalysis |
| Autore | Naldoni Alberto |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (208 p.) |
| Soggetto non controllato |
UV-visible
oxidative reaction systems photodegradation nanospheres heterojunction Ag/AgCl@TiO2 fibers polymorphism XRD copper-modified titania ultrasonic vibration brookite TiO2 modification simulated Extended X-ray Adsorption Fine-Structure (EXAFS) nanorod spheres trapped electrons flame-spray pyrolysis titania/water interface microwave irradiation plasmonic photocatalyst graphene-TiO2 photocatalytic hydrogen production microstreaming B3LYP HRTEM hardness printing and dyeing wastewater SCC-DFTB TiO2 photoelectrochemistry titanium bulk defects methanol photo-steam reforming spray coating sol-gel FTIR S-doping photocatalysis sulfidation lattice defects polymorph anodization pine-cone TiO2 nanoclusters nanorod arrays formation mechanism Cu and Pt nanoparticles excitons TiO2 nanotubes adhesion trapping flexible substrates optical absorption large-sized films surface defects titanium dioxide accumulated electrons |
| ISBN | 3-03897-695-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346686603321 |
|
Naldoni Alberto
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
|
Verzellesi Giovanni
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||