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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (438 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2D materials
3C-SiC 4H-SiC aluminum oxide arrhythmia detection binary oxides bulk growth cardiovascular monitoring charge removal rate chemical vapour deposition compensation compliant substrates cubic silicon carbide CVD CVD graphene defects degradation diamond diodes doping electrical characterization electron microscopy energy electronics epitaxial lift-off Fabry-Perot filter flexible bioelectronics flexible electronics Ga2O3 GaAs gallium oxide GaN GaN-on-diamond gate dielectric graphene absorption HEMT heteroepitaxy high-throughput method high-κ dielectrics hybrid integration InGaAs channel instability insulators interface iron-based superconductor irradiation temperature KOH etching material printing MOS MoS2 MPCVD growth nanomanufacturing nanomembrane ohmic contact optical fibers power electronics proton and electron irradiation pulsed laser deposition quasi-vertical GaN radiation effects radiation hardness radio frequency sputtering reliability Schottky barrier Schottky diodes silica point defects silicon carbide SIMS simulation soft biosensors spinel stacking faults stress thermal management thin film threshold voltage Ti3SiC2 transistors transmission electron microscopy trapping traps trench MOS ultra-wide bandgap van der Waals vertical GaN wearable sensors wide band gap semiconductors ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon-Based Nanomaterials : : Technology and Applications / / Robert W. Kelsall
| Silicon-Based Nanomaterials : : Technology and Applications / / Robert W. Kelsall |
| Autore | Kelsall Robert W |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (94 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
graphene oxide optical gain media nano silica sol in-situ growth silicon quantum dots gold nanoparticles nanofabrication thermal reduction long-term mechanical tests self-aligned nanowires silicon carbide micro-mechanism telecom wavelengths nanoparticles single-crystal Si nanomembrane (Si NMs) nanowires localized surface plasmon resonances C/C composites thin film transistor strain engineering nanomembranes light emitting devices quantum photonics ultrathin nanowires electroluminescence enhancement mechanical properties group-IV semiconductors self-assembly silicon SiC nanowires fluctuating temperature-humidity conditions TiO2 insertion layer |
| ISBN |
9783039210435
3039210432 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346667103321 |
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Kelsall Robert W
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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