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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (438 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
vertical GaN
quasi-vertical GaN reliability trapping degradation MOS trench MOS threshold voltage nanomanufacturing high-throughput method material printing flexible bioelectronics nanomembrane hybrid integration GaAs InGaAs channel epitaxial lift-off HEMT van der Waals 3C-SiC stacking faults doping KOH etching silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature heteroepitaxy bulk growth compliant substrates defects stress cubic silicon carbide power electronics thin film iron-based superconductor pulsed laser deposition transmission electron microscopy diamond MPCVD growth electron microscopy chemical vapour deposition 2D materials MoS2 silica point defects optical fibers radiation effects 4H-SiC ohmic contact SIMS Ti3SiC2 simulation Schottky barrier Schottky diodes electrical characterization graphene absorption Fabry–Perot filter radio frequency sputtering CVD graphene GaN thermal management GaN-on-diamond CVD arrhythmia detection cardiovascular monitoring soft biosensors wearable sensors flexible electronics gate dielectric aluminum oxide interface traps instability insulators binary oxides high-κ dielectrics wide band gap semiconductors energy electronics ultra-wide bandgap diodes transistors gallium oxide Ga2O3 spinel ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon-Based Nanomaterials: Technology and Applications
| Silicon-Based Nanomaterials: Technology and Applications |
| Autore | Kelsall Robert W |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (94 p.) |
| Soggetto non controllato |
ohmic contact
graphene oxide optical gain media nano silica sol in-situ growth silicon quantum dots gold nanoparticles nanofabrication thermal reduction long-term mechanical tests self-aligned nanowires silicon carbide micro-mechanism telecom wavelengths nanoparticles single-crystal Si nanomembrane (Si NMs) nanowires localized surface plasmon resonances C/C composites thin film transistor strain engineering nanomembranes light emitting devices quantum photonics ultrathin nanowires electroluminescence enhancement mechanical properties group-IV semiconductors self-assembly silicon SiC nanowires fluctuating temperature-humidity conditions TiO2 insertion layer |
| ISBN | 3-03921-043-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Silicon-Based Nanomaterials |
| Record Nr. | UNINA-9910346667103321 |
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Kelsall Robert W
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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