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Emerging Memory and Computing Devices in the Era of Intelligent Machines
| Emerging Memory and Computing Devices in the Era of Intelligent Machines |
| Autore | Khalili Pedram |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (276 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
3D-stacked
analogue computing annealing temperatures associative processor BCH bioelectronic devices biologic gate biomemory bionanohybrid material bioprocessor bipolar resistive switching characteristics blockchain chalcogenide character recognition charge spreading conductive filament configurable logic-in-memory architecture convolutional neural networks crossbar crossbar array CUDA data retention decoder DRAM dynamic voltage scaling ECG electrochemical metallization (ECM) electrochemical metallization cell emerging technologies Fast Fourier Transform flash memory flip-flop floating gate Galois field GPU guide training Hebbian training hybrid iBM image classification in-DRAM cache in-memory computing Internet of things ion conduction logic-in-memory low-latency low-power low-power technique magnetic tunnel junction magnetoresistive random access memory matrix-vector multiplication MCU (microprogrammed control unit) memory wall memristor multi-level cell n/a nanoparticles neuromorphic computing neuromorphic system non-von neumann architecture non-von Neumann architecture nonvolatile memory nucleic acid Oxygen-related trap perpendicular Nano Magnetic Logic (pNML) phase change memory plasma treatment power gating programmable ramp-down current pulses protein quantum point contact real-time system resistance switching mechanism resistive memory resistive random access memory (RRAM) RISC-V self-directed channel (SDC) silicon oxide-based memristors solution-based dielectric SONOS STT-MRAM synaptic weight task placement U-shape recessed channel variability voltage-controlled magnetic anisotropy Weibull distribution wire resistance |
| ISBN | 3-03928-503-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404088103321 |
Khalili Pedram
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Preparation and Properties of 2D Materials
| Preparation and Properties of 2D Materials |
| Autore | Cho Byungjin |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (142 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
2D heterostructure
2D/2D heterojunction atomic crystal band-to-band tunneling (BTBT) bias stress stability bilayer-stacked structure black phosphorus carbon nitride chemical vapor deposition contact resistance disorder ferroelectrics few-layer MoS2 film-substrate interaction flexible substrate g-C3N4 interfacial layer junction FET Langmuir-Blodgett technique liquid exfoliation lubricant additives magnetron sputtering magnetron sputtering power mechanical exfoliation molybdenum disulfide molybdenum trioxide MoS2 MoS2 nanosheet n/a nanoplates natural molybdenite Nb2O5 interlayer NbSe2 neuromorphic system P-doped MoS2 p-type conduction P2O5 photoelectric properties photoluminescence Q-switched laser raman spectroscopy Raman spectroscopy saturable absorbers scanning Kelvin probe microscopy SiO2 synapse device synthesis transition metal dichalcogenides tribological properties tunneling diode tunneling FET two-dimensional materials uniaxial strain V2Se9 WS2 WSe2 α-MoO3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557292403321 |
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Cho Byungjin
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Semiconductor Memory Devices for Hardware-Driven Neuromorphic Systems
| Semiconductor Memory Devices for Hardware-Driven Neuromorphic Systems |
| Autore | Cho Seongjae |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (81 p.) |
| Soggetto topico |
Energy industries & utilities
Technology: general issues |
| Soggetto non controllato |
3-D neuromorphic system
3-D stacked synapse array a-IGZO memristor benchmarking neuromorphic HW bimodal distribution of effective Schottky barrier height Boyer-Moore charge-trap flash synapse DNA matching algorithm energy consumption flexible electronics gradual and abrupt modulation hardware-based neuromorphic system ionized oxygen vacancy leaky integrate-and-fire neuron MPI for neuromorphic HW neural network neuromorphic engineering neuromorphic platform neuromorphic system non filamentary resistive switching on-chip learning organic field-effect transistors overlapping pattern issue pattern recognition Schottky barrier tunneling short-term plasticity Si processing compatibility spiking neural network spinMPI spiNNaker synaptic device synaptic devices TCAD device simulation vanadium dioxide |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557566603321 |
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Cho Seongjae
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
anode
anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor CVD dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth Fin etching FinFET germanium GeSn GOI heteroepitaxy HfO2/Si0.7Ge0.3 gate stack HNO3 concentration III-V on Si in-plane nanowire interface state density lasers lithium-ion batteries long-term potentiation (LTP) n/a nanowire-based quantum devices neural network neuromorphic system organotrialkoxysilane ozone oxidation p+-Ge0.8Si0.2/Ge stack passivation pattern recognition photodetectors prussian blue nanoparticles quantum computing quantum dot quasi-atomic-layer etching (q-ALE) responsivity selective epitaxial growth (SEG) selective wet etching short-term potentiation (STP) Si-cap Si-MOS silica beads silicon site-controlled spin qubits stacked SiGe/Si threading dislocation densities (TDDs) transistors vertical gate-all-around (vGAA) vertical Gate-all-around (vGAA) water decontamination yolk−shell structure |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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