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Dynamics and Applications of Photon-Nanostructured Systems
| Dynamics and Applications of Photon-Nanostructured Systems |
| Autore | Sarantopoulou Evangelia |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (256 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
nanomechanical resonator
superconducting resonator wave function unitary transformation Hamiltonian probability density adiabatic condition quantum solution nanohole microsphere subwavelength-scale light focusing high-responsivity ultraviolet photodetectors nano-scale fin isolation wide-band gap semiconductors ZnO nanorods two-dimensional electron gas visible-blind whispering-gallery-mode (WGM) sensor water-immersion-objective (WIO) microdisk laser inorganic boron-based nanostructures boron monoelement nanowire and nanotube borophene rare-earth boride (REB6) optoelectronic properties guided mode resonance figure of merit biosensor detection limits transition metal surface plasmon nanoparticle nanophotonics hydrogen storage sensing nuclear fusion energy device microdisk laser spectral modulation optofluidic coupled microdisk nanostructures optical pillar gratings photonic crystals two-photon lithography direct laser writing laser induced subwavelength ripples surface plasmon polaritons coulomb explosion stainless steel photonic nanoscience nanotechnology porous Si-SiO2 UV filters responsivity photodetectors interface/interface engineering charge carriers nanowire nanolaser metal grating nanocavities non-thermal equilibrium water entropy nanothermodynamics nanoindentation AFM electric dipole interactions VUV irradiation random walk EUV lithography chemically amplified resists inorganic resists main chain scission resists electron-induced chemistry |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557771503321 |
Sarantopoulou Evangelia
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrical and Electro-Optical Biosensors
| Electrical and Electro-Optical Biosensors |
| Autore | Lee Mon-Juan |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (152 p.) |
| Soggetto topico |
Research & information: general
Biology, life sciences Biochemistry |
| Soggetto non controllato |
printed circuit board
sensor electrode electrochemical sensor printed biosensors printing technologies electrochemistry point-of-care ovarian cancer nanowire biosensor nanowire silicon-on-insulator CA 125 antibodies liquid crystal photopolymer UV exposure bovine serum albumin protein assay dielectric spectroscopy lyotropic chromonic liquid crystal label-free biosensor optical biosensor immunoassay transmission spectrometry spoof localized surface plasmon polariton sensor glucose solution millimeter wave metamaterial spin-coating single-substrate cancer biomarker CA125 dengue virus dengue serotype mosquito-borne viral disease virus detection electrochemical impedance spectroscopy cancer cells dielectrophoresis crossover frequency electrical impedance spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910674051003321 |
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Lee Mon-Juan
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Graphene and Other 2D Layered Nanomaterial-Based Films: Synthesis, Properties and Applications
| Graphene and Other 2D Layered Nanomaterial-Based Films: Synthesis, Properties and Applications |
| Autore | Cesano Federico |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
MoS2 nanosheets
composites coating corrosion transition metal nitrides electrochemical delamination Cu film dye-sensitized solar cells layered materials electroless NiP alloy bubble transfer PtPd photoresponse van der Waals heterostructures MoS2 stanene water microbial fuel cells counter electrode PEMFC combustion molybdenum disulfide silicene free-standing films energy conversion efficiency nanowire chemical vapor transport deposition transition metal carbides nondestructive reusability tungsten disulfide graphene surface enhanced Raman spectroscopy 2D reduced graphene oxide transition metal dichalcogenides epitaxial growth WS2 Pt nanoparticles graphene/MoS2/Si heterostructure mechanism thermal management transition metal carbonitrides interfaces photoluminescence air-cathode germanene 2D materials microhardness monolayer coatings stainless steel mesh electrode carbon nitride chemical vapor deposition two-dimensional materials plasma thermal conductivity plasmonic structure graphene suspension |
| ISBN | 3-03921-903-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Graphene and Other 2D Layered Nanomaterial-Based Films |
| Record Nr. | UNINA-9910367738303321 |
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Cesano Federico
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanodevices for Microwave and Millimeter Wave Applications
| Nanodevices for Microwave and Millimeter Wave Applications |
| Autore | Huynen Isabelle |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (92 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
frequency doubler
broadband matching Schottky diodes self-bias resistor conversion loss three-dimensional electromagnetic (3D-EM) model millimeter wave terahertz high-gain compact wideband resonant cavity Fabry-Perot cavity cavity resonator EBG resonator J band MEMS switch microwave ferromagnetic laser processing substrate integrated waveguide nanowire multi-wall carbon nanotubes microwave impedance small antennas gas sensors acetone detection microwave application UV illumination low-noise amplifier (LNA) frequency-reconfigurable LNA multimodal circuit SiGe BiCMOS hetero junction bipolar transistor (HBT) RF switch |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557574503321 |
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Huynen Isabelle
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (96 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
random dopant
drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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