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Dynamics and Applications of Photon-Nanostructured Systems
| Dynamics and Applications of Photon-Nanostructured Systems |
| Autore | Sarantopoulou Evangelia |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (256 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
adiabatic condition
AFM biosensor boron monoelement nanowire and nanotube borophene charge carriers chemically amplified resists coulomb explosion coupled microdisk detection limits direct laser writing electric dipole interactions electron-induced chemistry energy device entropy EUV lithography figure of merit guided mode resonance Hamiltonian high-responsivity hydrogen storage inorganic boron-based nanostructures inorganic resists interface/interface engineering laser laser induced subwavelength ripples main chain scission resists metal grating microdisk microdisk laser microsphere n/a nano-scale fin isolation nanocavities nanohole nanoindentation nanolaser nanomechanical resonator nanoparticle nanophotonics nanostructures nanotechnology nanothermodynamics nanowire non-thermal equilibrium nuclear fusion optical pillar gratings optoelectronic properties optofluidic photodetectors photonic crystals photonic nanoscience porous Si-SiO2 probability density quantum solution random walk rare-earth boride (REB6) responsivity sensing sensor spectral modulation stainless steel subwavelength-scale light focusing superconducting resonator surface plasmon surface plasmon polaritons transition metal two-dimensional electron gas two-photon lithography ultraviolet photodetectors unitary transformation UV filters visible-blind VUV irradiation water water-immersion-objective (WIO) wave function whispering-gallery-mode (WGM) wide-band gap semiconductors ZnO nanorods |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557771503321 |
Sarantopoulou Evangelia
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Electrical and Electro-Optical Biosensors
| Electrical and Electro-Optical Biosensors |
| Autore | Lee Mon-Juan |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (152 p.) |
| Soggetto topico |
Biochemistry
Biology, life sciences Research & information: general |
| Soggetto non controllato |
antibodies
bovine serum albumin CA 125 cancer biomarker CA125 cancer cells crossover frequency dengue serotype dengue virus dielectric spectroscopy dielectrophoresis electrical impedance spectroscopy electrochemical impedance spectroscopy electrochemical sensor electrochemistry glucose solution immunoassay label-free biosensor liquid crystal lyotropic chromonic liquid crystal metamaterial millimeter wave mosquito-borne viral disease n/a nanowire nanowire biosensor optical biosensor ovarian cancer photopolymer point-of-care printed biosensors printed circuit board printing technologies protein assay sensor sensor electrode silicon-on-insulator single-substrate spin-coating spoof localized surface plasmon polariton transmission spectrometry UV exposure virus detection |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910674051003321 |
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Lee Mon-Juan
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Graphene and Other 2D Layered Nanomaterial-Based Films: Synthesis, Properties and Applications
| Graphene and Other 2D Layered Nanomaterial-Based Films: Synthesis, Properties and Applications |
| Autore | Cesano Federico |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 online resource (138 p.) |
| Soggetto topico | Chemistry |
| Soggetto non controllato |
2D
2D materials air-cathode bubble transfer carbon nitride chemical vapor deposition chemical vapor transport deposition coatings combustion composites coating corrosion counter electrode Cu film dye-sensitized solar cells electrochemical delamination electroless NiP alloy energy conversion efficiency epitaxial growth free-standing films germanene graphene graphene suspension graphene/MoS2/Si heterostructure interfaces layered materials mechanism microbial fuel cells microhardness molybdenum disulfide monolayer MoS2 MoS2 nanosheets nanowire nondestructive PEMFC photoluminescence photoresponse plasma plasmonic structure Pt nanoparticles PtPd reduced graphene oxide reusability silicene stainless steel mesh electrode stanene surface enhanced Raman spectroscopy thermal conductivity thermal management transition metal carbides transition metal carbonitrides transition metal dichalcogenides transition metal nitrides tungsten disulfide two-dimensional materials van der Waals heterostructures water WS2 |
| ISBN | 3-03921-903-0 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Graphene and Other 2D Layered Nanomaterial-Based Films |
| Record Nr. | UNINA-9910367738303321 |
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Cesano Federico
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanodevices for Microwave and Millimeter Wave Applications
| Nanodevices for Microwave and Millimeter Wave Applications |
| Autore | Huynen Isabelle |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (92 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
acetone detection
broadband matching cavity resonator compact conversion loss EBG resonator Fabry-Perot cavity ferromagnetic frequency doubler frequency-reconfigurable LNA gas sensors hetero junction bipolar transistor (HBT) high-gain J band laser processing low-noise amplifier (LNA) MEMS microwave microwave application microwave impedance millimeter wave multi-wall carbon nanotubes multimodal circuit n/a nanowire resonant cavity RF switch Schottky diodes self-bias resistor SiGe BiCMOS small antennas substrate integrated waveguide switch terahertz three-dimensional electromagnetic (3D-EM) model UV illumination wideband |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557574503321 |
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Huynen Isabelle
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (96 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
aspect ratio of channel cross-section
charge transport CMOS circuit conduction mechanism constriction Coulomb interaction DC and AC characteristic fluctuations device simulation dimensionality reduction drift-diffusion electron-phonon interaction fabrication field effect transistor gate-all-around geometric correlations heat equation hot electrons III-V Integration Kubo-Greenwood formalism lowest order approximation material properties metal gate modelling Monte Carlo MOSFETs nano-cooling nano-transistors nanodevice nanojunction nanowire nanowire field-effect transistors nanowire transistor noise margin fluctuation non-equilibrium Green functions nonequilibrium Green's function one-dimensional multi-subband scattering models Padé approximants phonon-phonon interaction power dissipation power fluctuation quantum confinement quantum electron transport quantum modeling quantum transport random dopant Richardson extrapolation Schrödinger based quantum corrections schrödinger-poisson solvers screening self-consistent Born approximation self-cooling silicon nanomaterials silicon nanowires statistical device simulation stochastic Schrödinger equations TASE thermoelectricity timing fluctuation variability variability effects work function fluctuation ZnO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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