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Fracture and Fatigue Assessments of Structural Components
| Fracture and Fatigue Assessments of Structural Components |
| Autore | Campagnolo Alberto |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (186 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
fatigue life prediction
dissipated energy thermo-graphic technique thermal evolution peridynamics composite ordinary state-based double cantilever composite beam (DCB) delamination control volume concept critical plane approach fatigue life assessment severely notched specimens strain energy density monitoring of fatigue crack damage index ultrasonic guided waves sensor network structural health monitoring thermal fatigue thermal barrier coat master–slave model life prediction nozzle guide vane microcracks multiple fatigue crack crack coalescence concrete beams damage evolution multiscale fatigue damage evolution ABAQUS subroutine 3D reconstruction MCT scanning fatigue life cleat filler broken coal seam wellbore stability analytical model affecting factors fatigue crack welded bogie frame wheel polygon rail corrugation running speed finite fracture mechanics nanoscale silicon brittle notch fracture nanodevice life assessment crack initiation crack propagation finite element method scroll compressor fatigue crack metal structure welded joint FEM |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557301003321 |
Campagnolo Alberto
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (96 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
random dopant
drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||