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Fracture and Fatigue Assessments of Structural Components
Fracture and Fatigue Assessments of Structural Components
Autore Campagnolo Alberto
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 online resource (186 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato 3D reconstruction
ABAQUS subroutine
affecting factors
analytical model
brittle
broken coal seam
cleat filler
composite
concrete beams
control volume concept
crack
crack coalescence
crack initiation
crack propagation
critical plane approach
damage evolution
damage index
delamination
dissipated energy
double cantilever composite beam (DCB)
fatigue
fatigue crack
fatigue damage evolution
fatigue life
fatigue life assessment
fatigue life prediction
FEM
finite element method
finite fracture mechanics
fracture
life assessment
life prediction
master-slave model
MCT scanning
metal
microcracks
monitoring of fatigue crack
multiple fatigue crack
multiscale
nanodevice
nanoscale
notch
nozzle guide vane
ordinary state-based
peridynamics
rail corrugation
running speed
scroll compressor
sensor network
severely notched specimens
silicon
strain energy density
structural health monitoring
structure
thermal barrier coat
thermal evolution
thermal fatigue
thermo-graphic technique
ultrasonic guided waves
welded bogie frame
welded joint
wellbore stability
wheel polygon
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557301003321
Campagnolo Alberto  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nanowire Field-Effect Transistor (FET)
Nanowire Field-Effect Transistor (FET)
Autore García-Loureiro Antonio
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 online resource (96 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato aspect ratio of channel cross-section
charge transport
CMOS circuit
conduction mechanism
constriction
Coulomb interaction
DC and AC characteristic fluctuations
device simulation
dimensionality reduction
drift-diffusion
electron-phonon interaction
fabrication
field effect transistor
gate-all-around
geometric correlations
heat equation
hot electrons
III-V
Integration
Kubo-Greenwood formalism
lowest order approximation
material properties
metal gate
modelling
Monte Carlo
MOSFETs
nano-cooling
nano-transistors
nanodevice
nanojunction
nanowire
nanowire field-effect transistors
nanowire transistor
noise margin fluctuation
non-equilibrium Green functions
nonequilibrium Green's function
one-dimensional multi-subband scattering models
Padé approximants
phonon-phonon interaction
power dissipation
power fluctuation
quantum confinement
quantum electron transport
quantum modeling
quantum transport
random dopant
Richardson extrapolation
Schrödinger based quantum corrections
schrödinger-poisson solvers
screening
self-consistent Born approximation
self-cooling
silicon nanomaterials
silicon nanowires
statistical device simulation
stochastic Schrödinger equations
TASE
thermoelectricity
timing fluctuation
variability
variability effects
work function fluctuation
ZnO
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Nanowire Field-Effect Transistor
Record Nr. UNINA-9910557553303321
García-Loureiro Antonio  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui