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Micro- and Nanotechnology of Wide Bandgap Semiconductors
Micro- and Nanotechnology of Wide Bandgap Semiconductors
Autore Piotrowska Anna B
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (114 p.)
Soggetto topico Technology: general issues
Soggetto non controllato GaN HEMT
self-heating effect
microwave power amplifier
thermal impedance
thermal time constant
thermal equivalent circuit
GaN
crystal growth
ammonothermal method
HVPE
ion implantation
gallium nitride
thermodynamics
ultra-high-pressure annealing
diffusion
diffusion coefficients
molecular beam epitaxy
nitrides
laser diode
tunnel junction
LTE
AlN
AlGaN/GaN
interface state density
conductance-frequency
MISHEMT
gallium nitride nanowires
polarity
Kelvin probe force microscopy
selective area growth
selective epitaxy
AlGaN/GaN heterostructures
edge effects
effective diffusion length
MOVPE
nanowires
AlGaN
LEDs
growth polarity
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557343303321
Piotrowska Anna B  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Nanostructured Light-Emitters
Nanostructured Light-Emitters
Autore Nguyen Hieu Pham Trung
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 electronic resource (208 p.)
Soggetto topico History of engineering & technology
Soggetto non controllato Liquid phase deposition method
InGaN/GaN light-emitting diode
silver nanoparticle
zinc oxide
localized surface plasmon
β-Ga2O3
III-Nitrides
monoclinic
hexagonal arrangement
high-power
current distribution
vertical structure LED
blue organic light emitting diodes
transport materials
host-dopant
nanoparticles
luminescence
non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals
photoluminescence properties
tunable fluorescence emission
one-pot approach
perovskite light-emitting diodes
three-step spin coating
hole transport layer
PEDOT:PSS/MoO3-ammonia composite
μLED displays
μLEDs
GaN nanowires
core-shell structure
ultraviolet (UV) emitter
surface plasmon
Pt nanoparticles
hole-pattern
photon emission efficiency
distributed Bragg reflectors
gratings
GaN-based lasers
linewidth
epsilon-near-zero
wideband absorber
plasmon mode
Brewster mode
visible light communication
photonic crystals
flip-chip LED
Purcell effect
light extraction efficiency
nanostructured materials
surface/interface properties
nanostructured light-emitting devices
physical mechanism
surface/interface modification
surface/interface control
micro-scale light emitting diode
sapphire substrate
encapsulation
compound semiconductor
nanostructure
ultraviolet
light-emitting diode (LED)
molecular beam epitaxy
GaN
AlN
photonic nanojet
photonic nanojet array
self-assembly
template-assisted self-assembly
patterning efficiency
III-nitride thin film
nanostructures
ultraviolet emitters
surface passivation
luminescence intensity
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557105503321
Nguyen Hieu Pham Trung  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
New Trends in Lithium Niobate : From Bulk to Nanocrystals
New Trends in Lithium Niobate : From Bulk to Nanocrystals
Autore Corradi Gábor
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (382 p.)
Soggetto topico Research & information: general
Soggetto non controllato lithium niobate
small polaron hopping
transient absorption
mode-locked laser
nonlinear mirror mode locking
lithium tantalate
crystal structure
chemical composition
ferroelectrics
second harmonic generation
lead-free piezoelectrics
intrinsic defects
extrinsic defects
elemental doping
ferromagnetism
diluted-magnetic oxides
LiNbO3
LiTaO3
oxide crystals
lanthanides
luminescence
LNOI
ferroelectric domains
domain-wall conduction
AFM
thin film lithium niobate
TFLN
x-cut LN
domain walls
piezoresponse force microscopy
second-harmonic generation
Raman scattering
electro-optics
whispering gallery resonators
polarons
photorefractivity
Marcus-Holstein’s theory
Monte Carlo simulations
strontium titanate
self-trapped electrons
oxygen vacancies
defects
impurity
intrinsic defect
paramagnetic ion
electron paramagnetic resonance
electron nuclear double resonance
lithium vacancy
lithium
niobate
epitaxy
thin film
liquid phase epitaxy
molecular beam epitaxy
sputtering
pulsed laser deposition
chemical vapor deposition
lithium niobate-tantalate
piezoelectric
acoustic
high-temperature
sensor
Q-factor
BAW resonator
parametric down-conversion
photon-pair generation
extended phase matching
microring resonator
varFDTD
lithium tantalate thin film
electro-optical devices
lattice location
radiation damage
ion beam analysis
hyperfine interactions
charge localization
lattice deformation
optical response
density-functional theory
Bethe-Salpeter equation
nanoparticles
nanopowders
X-ray diffraction
Raman spectroscopy
temperature dependence of electroconductivity
bipolarons
defect structure and generation
Li diffusion
bulk crystals
thin films
nanocrystals
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti New Trends in Lithium Niobate
Record Nr. UNINA-9910557609903321
Corradi Gábor  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Terahertz Technology and Its Applications
Terahertz Technology and Its Applications
Autore Peña Victor Pacheco
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (162 p.)
Soggetto topico Research & information: general
Soggetto non controllato W band
Schottky Diode Detectors
ZBD modeling
wire bonding
flip-chip
Terahertz radar
radar cross-section
signal-to-noise ratio
adaptive range gates
cascaded doubler
quadrupler
Schottky varactor
hybrid integrated circuit
terahertz spectroscopy
optical delay line
correction
optical encoder
terahertz spectra
terahertz metrology
bias
sub-harmonic mixer
anti-series
Schottky diode
conversion loss
terahertz wave generation
InGaAs
molecular beam epitaxy
time-domain spectroscopy
photoconductive antenna
open stone relics
hollowing
weathered
preservation of cultural heritage
THz-TDS
rubber
vulcanization
silica dispersion
terahertz imaging
light field imaging
synthetic aperture imaging
image distortion
resolving power
THz detector
rectangular inset-feed patch antenna
catadioptric horn-like lens
CMOS process
resonances
periodic waveguides
reflection phases
topological properties
oscillator
THz
high output power
CMOS
terahertz waves
honeycomb sandwiches
foreign materials
time-of-flight
electric field
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557366803321
Peña Victor Pacheco  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui