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Emerging Memory and Computing Devices in the Era of Intelligent Machines
| Emerging Memory and Computing Devices in the Era of Intelligent Machines |
| Autore | Khalili Pedram |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (276 p.) |
| Soggetto non controllato |
image classification
bipolar resistive switching characteristics bioelectronic devices self-directed channel (SDC) programmable ramp-down current pulses nanoparticles protein DRAM convolutional neural networks silicon oxide-based memristors electrochemical metallization cell magnetic tunnel junction power gating resistance switching mechanism BCH Fast Fourier Transform nucleic acid biomemory conductive filament resistive random access memory (RRAM) non-von Neumann architecture emerging technologies Galois field variability logic-in-memory charge spreading memristor Hebbian training crossbar quantum point contact SONOS bionanohybrid material ECG neuromorphic computing CUDA low-latency iBM Oxygen-related trap nonvolatile memory phase change memory floating gate non-von neumann architecture 3D-stacked STT-MRAM solution-based dielectric GPU Internet of things configurable logic-in-memory architecture memory wall biologic gate synaptic weight guide training ion conduction perpendicular Nano Magnetic Logic (pNML) Weibull distribution real-time system in-DRAM cache task placement dynamic voltage scaling MCU (microprogrammed control unit) wire resistance multi-level cell chalcogenide decoder character recognition matrix-vector multiplication hybrid magnetoresistive random access memory blockchain electrochemical metallization (ECM) RISC-V U-shape recessed channel neuromorphic system in-memory computing crossbar array associative processor low-power plasma treatment voltage-controlled magnetic anisotropy flash memory resistive memory analogue computing bioprocessor annealing temperatures data retention flip-flop low-power technique |
| ISBN | 3-03928-503-3 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404088103321 |
Khalili Pedram
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Enabling Technologies for Very Large-Scale Synaptic Electronics
| Enabling Technologies for Very Large-Scale Synaptic Electronics |
| Autore | Alexantrou Serb |
| Pubbl/distr/stampa | Frontiers Media SA, 2018 |
| Descrizione fisica | 1 electronic resource (105 p.) |
| Collana | Frontiers Research Topics |
| Soggetto non controllato |
memristor
cognitive computing synaptic electronics neural network |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346738603321 |
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Alexantrou Serb
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| Frontiers Media SA, 2018 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications
| Memristors for Neuromorphic Circuits and Artificial Intelligence Applications |
| Autore | Suñé Jordi |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (244 p.) |
| Soggetto non controllato |
graphene oxide
artificial neural network simulation neural networks STDP neuromorphics spiking neural network artificial intelligence hierarchical temporal memory synaptic weight optimization transistor-like devices multiscale modeling memristor crossbar spike-timing-dependent plasticity memristor-CMOS hybrid circuit pavlov wire resistance AI neocortex synapse character recognition resistive switching electronic synapses defect-tolerant spatial pooling emulator compact model deep learning networks artificial synapse circuit design memristors neuromorphic engineering memristive devices OxRAM neural network hardware sensory and hippocampal responses neuromorphic hardware boost-factor adjustment RRAM variability Flash memories neuromorphic reinforcement learning laser memristor hardware-based deep learning ICs temporal pooling self-organization maps crossbar array pattern recognition strongly correlated oxides vertical RRAM autocovariance neuromorphic computing synaptic device cortical neurons time series modeling spiking neural networks neuromorphic systems synaptic plasticity |
| ISBN | 3-03928-577-7 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090703321 |
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Suñé Jordi
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling
| Nanoelectronic Materials, Devices and Modeling |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN | 3-03921-226-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
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Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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