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Advances in Sensors and Sensing for Technical Condition Assessment and NDT
| Advances in Sensors and Sensing for Technical Condition Assessment and NDT |
| Autore | Boczar Tomasz |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (216 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
3D sensing
acoustic emission AE sensor attenuation boundary conditions circuit modeling coefficient of thermal expansion compounding Nakagami imaging contrast-enhanced ultrasound current measurement defect identification eddy current elastic waves electrodynamic accelerators feature extraction Fizeau fiber interferometer frequency analysis genetic algorithm geometric layout of railway track GNSS mobile measurements high-current pulses high-current shunts image processing incubation infrasound correlation analysis infrasound measurement system insulation inverse problem knee joint laser ultrasound lateral temperature gradient low-frequency noise low-frequency sensor machine learning measuring scale muscle perfusion n/a Nakagami parameter neural network non-destructive evaluation non-invasive examination OLTC power transformer principal component analysis pulse compression ROC curve Rogowski coil route's polygon scattering solar radiation intensity spectral features spectrum supervised classification temperature field temperature monitoring thermoelastic deformation track axis identification tramway loop ultrasonic testing VAG vibroarthography wavelet transform wind turbine |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557471903321 |
Boczar Tomasz
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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High-Density Solid-State Memory Devices and Technologies
| High-Density Solid-State Memory Devices and Technologies |
| Autore | Monzio Compagnoni Christian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (210 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
3D NAND
3D NAND Flash array test pattern artificial intelligence artificial neural networks bandwidth BBCube bumpless charge-trap cell CMOS under array CoFeB composite free layer COW crosspoint array deep learning dielectric endurance evaluation method floating gate cell in-memory computing low power electronics low-frequency noise MOSFET n/a NAND Flash memory neuromorphic computing NOR Flash memory arrays oxide trapped charge phonon power consumption power spectrum program noise program suspend pulse-width modulation random telegraph noise reliability resistive switching memory RTN Solid State Drives spectral index spintronics STT-MRAM surface roughness TAT thermal management transient analysis TSV Wiener-Khinchin WOW yield |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566470403321 |
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Monzio Compagnoni Christian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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