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Advances in Sensors and Sensing for Technical Condition Assessment and NDT
| Advances in Sensors and Sensing for Technical Condition Assessment and NDT |
| Autore | Boczar Tomasz |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (216 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
pulse compression
scattering attenuation insulation ultrasonic testing OLTC AE sensor acoustic emission feature extraction supervised classification machine learning contrast-enhanced ultrasound muscle perfusion Nakagami parameter compounding Nakagami imaging low-frequency sensor power transformer low-frequency noise genetic algorithm geometric layout of railway track track axis identification tramway loop route's polygon GNSS mobile measurements vibroarthography VAG knee joint spectral features frequency analysis non-invasive examination lateral temperature gradient temperature field boundary conditions solar radiation intensity temperature monitoring non-destructive evaluation eddy current 3D sensing inverse problem wavelet transform principal component analysis neural network incubation spectrum image processing ROC curve infrasound measurement system wind turbine infrasound correlation analysis measuring scale thermoelastic deformation coefficient of thermal expansion elastic waves laser ultrasound Fizeau fiber interferometer defect identification high-current pulses current measurement high-current shunts circuit modeling Rogowski coil electrodynamic accelerators |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557471903321 |
Boczar Tomasz
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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High-Density Solid-State Memory Devices and Technologies
| High-Density Solid-State Memory Devices and Technologies |
| Autore | Monzio Compagnoni Christian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
resistive switching memory
in-memory computing crosspoint array artificial intelligence deep learning dielectric RTN TAT Wiener-Khinchin transient analysis phonon surface roughness spectral index power spectrum program suspend 3D NAND Flash Solid State Drives MOSFET low-frequency noise random telegraph noise evaluation method array test pattern STT-MRAM spintronics CoFeB composite free layer low power electronics NAND Flash memory endurance reliability oxide trapped charge artificial neural networks neuromorphic computing NOR Flash memory arrays program noise pulse-width modulation 3D NAND floating gate cell charge-trap cell CMOS under array bumpless TSV WOW COW BBCube bandwidth yield power consumption thermal management |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566470403321 |
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Monzio Compagnoni Christian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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