Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
Filipovic Lado
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu
| Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN |
9783039212262
3039212265 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
|
Li Qiliang
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Radiation Sensing: Design and Deployment of Sensors and Detectors
| Radiation Sensing: Design and Deployment of Sensors and Detectors |
| Autore | Gamage Kelum |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (157 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
air insulation
Bayesian inference Compton edge reconstruction COTS commercial MAPS deep autoencoder deep learning dose rate uncertainty energy broadening correction G(E) function gain gamma ray detector gamma spectral analysis gamma-ray gaussian process regression ground-penetrating radar high-energy α-particle detection illicit trafficking integral time low voltage low-level radioactive contaminants low-resolution detector national security neutron non-proliferation nuclear decommissioning nuclear wastes operational quantities partial discharges passive radiation detection photomultiplier plastic gamma spectra radiation detection radiation response radiation sensing technologies radioactive nuclear waste radioisotope identification radiological characterisation radiological characterization rapid prototyping real-time dosimetry remote depth profiling remote-depth profiling rheology scintillations sensor fusion spectrum-to-dose conversion operator thick depletion width detectors uncertainty estimation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Radiation Sensing |
| Record Nr. | UNINA-9910557647803321 |
|
Gamage Kelum
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
4H-SiC
active power filter (APF) AESA radars Ag sinter paste AlGaN/GaN amorphous InGaZnO asymmetric multiple quantum wells barrier thickness breakdown voltage (BV) buffer trapping effect buried-channel composition-graded AlxGa1−xN electron blocking layer (EBL) copper metallization cosolvent direct bonded copper (DBC) substrate distortions distributed feedback (DFB) double barrier electrochromism electron leakage electron leakage current flexible devices gallium nitride gallium nitride (GaN) Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GaN GaN 5G GaN laser diode GaN-based vertical-cavity surface-emitting laser (VCSEL) GaN-on-GaN grooved-anode diode HEMT hierarchical nanostructures high electron mobility transistors high electron mobility transistors (HEMT) high-electron-mobility transistor (HEMT) high-electron-mobility transistors high-energy α-particle detection IGBT InGaN laser diodes jammer system low voltage metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) millimeter wave morphology n/a new radio nitrogen-doping normally off normally-off operation numerical simulation ON-state voltage optical absorption loss optical band gap optimization photon extraction efficiency photonic emitter polyol method power amplifier power cycle test power quality (PQ) power switching device proton irradiation recessed gate reliability RF front-end schottky barrier diodes self-align SiC micro-heater chip sidewall gratings silver nanoring silver nanowire spin coating stability surface gratings terahertz Gunn diode thermal resistance thick depletion width detectors thin-film transistor time-dependent dielectric breakdown (TDDB) transmittance tungsten trioxide film turn-off loss ultra-wide band gap vertical breakdown voltage vertical gate structure wide band gap semiconductors wide band-gap (WBG) wide bandgap semiconductors wide-bandgap semiconductor wideband ZnO nanorod/NiO nanosheet |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
|
Medjdoub Farid
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||