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Miniaturized Transistors
Miniaturized Transistors
Autore Grasser Tibor
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (202 p.)
Soggetto non controllato MOSFET
total ionizing dose (TID)
low power consumption
process simulation
two-dimensional material
negative-capacitance
power consumption
technology computer aided design (TCAD)
thin-film transistors (TFTs)
band-to-band tunneling (BTBT)
nanowires
inversion channel
metal oxide semiconductor field effect transistor (MOSFET)
spike-timing-dependent plasticity (STDP)
field effect transistor
segregation
systematic variations
Sentaurus TCAD
indium selenide
nanosheets
technology computer-aided design (TCAD)
high-? dielectric
subthreshold bias range
statistical variations
fin field effect transistor (FinFET)
compact models
non-equilibrium Green's function
etching simulation
highly miniaturized transistor structure
compact model
silicon nanowire
surface potential
Silicon-Germanium source/drain (SiGe S/D)
nanowire
plasma-aided molecular beam epitaxy (MBE)
phonon scattering
mobility
silicon-on-insulator
drain engineered
device simulation
variability
semi-floating gate
synaptic transistor
neuromorphic system
theoretical model
CMOS
ferroelectrics
tunnel field-effect transistor (TFET)
SiGe
metal gate granularity
buried channel
ON-state
bulk NMOS devices
ambipolar
piezoelectrics
tunnel field effect transistor (TFET)
FinFETs
polarization
field-effect transistor
line edge roughness
random discrete dopants
radiation hardened by design (RHBD)
low energy
flux calculation
doping incorporation
low voltage
topography simulation
MOS devices
low-frequency noise
high-k
layout
level set
process variations
subthreshold
metal gate stack
electrostatic discharge (ESD)
ISBN 3-03921-011-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346680003321
Grasser Tibor  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
New Trends and Applications in Femtosecond Laser Micromachining
New Trends and Applications in Femtosecond Laser Micromachining
Autore Vázquez Rebeca Martínez
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (158 p.)
Soggetto topico Research & information: general
Physics
Optical physics
Soggetto non controllato ultrafast laser microfabrication
microfluidic
glass bonding
ultrashort laser pulses
heat accumulation
transparent materials
quartz
stealth dicing
femtosecond
fused silica
double pulses
selective chemical etching
cell elasticity
endothelial cells
optical micromanipulation
holographic optical tweezers
two-photon polymerization
image processing
micromodels
porous media
3D multi-depth channels
laser machining
femtosecond laser micromachining
femtosecond laser material processing
micro/nanotechnology fabrication
atomic force microscope
laser ablation diameter
separation distance (SW)
sub-micron bridges
YBCO thin film
photonic quantum chip
femtosecond laser direct writing
Hadamard gate
CNOT gate
path-encoded Bell state
femtosecond laser
fs-assisted cataract surgery
laser-assisted ophthalmic surgery
high pulse frequency
low energy
roughness analysis
thermal annealing
integrated optics
glass micromachining
3D structuring
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910566480803321
Vázquez Rebeca Martínez  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui