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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
GaN HEMT
self-heating effect microwave power amplifier thermal impedance thermal time constant thermal equivalent circuit GaN crystal growth ammonothermal method HVPE ion implantation gallium nitride thermodynamics ultra-high-pressure annealing diffusion diffusion coefficients molecular beam epitaxy nitrides laser diode tunnel junction LTE AlN AlGaN/GaN interface state density conductance-frequency MISHEMT gallium nitride nanowires polarity Kelvin probe force microscopy selective area growth selective epitaxy AlGaN/GaN heterostructures edge effects effective diffusion length MOVPE nanowires AlGaN LEDs growth polarity |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials
| Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials |
| Autore | Cheng Zhenxiang |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (168 p.) |
| Soggetto topico |
Research & information: general
Physics |
| Soggetto non controllato |
PMN-PT thin films
preferred orientation ferroelectric property dielectric property flexible film capacitor Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 energy storage properties MOS capacitors Sm2O3 high-k gate dielectric atomic layer deposition conduction mechanisms interface state density BSFM phase transition aging electrical properties BiOCl/NaNbO3 heterojunction piezocatalysis photocatalysis degradation humidity sensing impedance-type sensors organometallic halide perovskite HZO PEALD ferroelectric memory deposition temperature film density remanent polarization fatigue endurance CBTi-BFO fine grain electric breakdown strength recoverable energy storage spin waves Dzyaloshinskii–Moriya interaction ferromagnetism spintronics two-dimensional materials ferroelectric properties scanning probe microscope negative piezoelectricity phase segregation multiferroic materials anisotropy DyFeO3 magnetoelectric coupling pulsed high magnetic field DM interaction crystalline YFeO3 magnetic properties enhanced weak ferromagnetism exchange interactions |
| ISBN | 3-0365-5944-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910640000203321 |
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Cheng Zhenxiang
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI Books, 2022 |
| Descrizione fisica | 1 electronic resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
silicon
yolk−shell structure anode lithium-ion batteries in-plane nanowire site-controlled epitaxial growth germanium nanowire-based quantum devices HfO2/Si0.7Ge0.3 gate stack ozone oxidation Si-cap interface state density passivation GOI photodetectors dark current responsivity prussian blue nanoparticles organotrialkoxysilane silica beads arsenite arsenate water decontamination vertical gate-all-around (vGAA) digital etch quasi-atomic-layer etching (q-ALE) selective wet etching HNO3 concentration doping effect vertical Gate-all-around (vGAA) p+-Ge0.8Si0.2/Ge stack dual-selective wet etching atomic layer etching (ALE) stacked SiGe/Si epitaxial grown Fin etching FinFET short-term potentiation (STP) long-term potentiation (LTP) charge-trap synaptic transistor band-to-band tunneling pattern recognition neural network neuromorphic system Si-MOS quantum dot spin qubits quantum computing GeSn CVD lasers detectors transistors III-V on Si heteroepitaxy threading dislocation densities (TDDs) anti-phase boundaries (APBs) selective epitaxial growth (SEG) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI Books, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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