Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN
AlGaN/GaN AlGaN/GaN heterostructures AlN ammonothermal method conductance-frequency crystal growth diffusion diffusion coefficients edge effects effective diffusion length gallium nitride gallium nitride nanowires GaN GaN HEMT growth polarity HVPE interface state density ion implantation Kelvin probe force microscopy laser diode LEDs LTE microwave power amplifier MISHEMT molecular beam epitaxy MOVPE n/a nanowires nitrides polarity selective area growth selective epitaxy self-heating effect thermal equivalent circuit thermal impedance thermal time constant thermodynamics tunnel junction ultra-high-pressure annealing |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
Piotrowska Anna B
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials
| Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials |
| Autore | Cheng Zhenxiang |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (168 p.) |
| Soggetto topico |
Research & information: general
Physics |
| Soggetto non controllato |
PMN-PT thin films
preferred orientation ferroelectric property dielectric property flexible film capacitor Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 energy storage properties MOS capacitors Sm2O3 high-k gate dielectric atomic layer deposition conduction mechanisms interface state density BSFM phase transition aging electrical properties BiOCl/NaNbO3 heterojunction piezocatalysis photocatalysis degradation humidity sensing impedance-type sensors organometallic halide perovskite HZO PEALD ferroelectric memory deposition temperature film density remanent polarization fatigue endurance CBTi-BFO fine grain electric breakdown strength recoverable energy storage spin waves Dzyaloshinskii–Moriya interaction ferromagnetism spintronics two-dimensional materials ferroelectric properties scanning probe microscope negative piezoelectricity phase segregation multiferroic materials anisotropy DyFeO3 magnetoelectric coupling pulsed high magnetic field DM interaction crystalline YFeO3 magnetic properties enhanced weak ferromagnetism exchange interactions |
| ISBN | 3-0365-5944-2 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910640000203321 |
|
Cheng Zhenxiang
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
anode
anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor CVD dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth Fin etching FinFET germanium GeSn GOI heteroepitaxy HfO2/Si0.7Ge0.3 gate stack HNO3 concentration III-V on Si in-plane nanowire interface state density lasers lithium-ion batteries long-term potentiation (LTP) n/a nanowire-based quantum devices neural network neuromorphic system organotrialkoxysilane ozone oxidation p+-Ge0.8Si0.2/Ge stack passivation pattern recognition photodetectors prussian blue nanoparticles quantum computing quantum dot quasi-atomic-layer etching (q-ALE) responsivity selective epitaxial growth (SEG) selective wet etching short-term potentiation (STP) Si-cap Si-MOS silica beads silicon site-controlled spin qubits stacked SiGe/Si threading dislocation densities (TDDs) transistors vertical gate-all-around (vGAA) vertical Gate-all-around (vGAA) water decontamination yolk−shell structure |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
|
Radamson Henry
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||