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Integrated Circuits and Systems for Smart Sensory Applications
Integrated Circuits and Systems for Smart Sensory Applications
Autore Serra-Graells Francesc
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (206 p.)
Soggetto topico History of engineering & technology
Technology: general issues
Soggetto non controllato AC coupling
ACE-Q100
area-efficient design
artificial intelligence
artificial neural networks
asynchronous control logic
capacitance-to-digital converter
capacitive digital to analog converter (CDAC)
closed-loop neurostimulator
CMOS
CMOS capacitive sensor interface
CMOS neural amplifier
dedicated short range communication (DSRC)
digital controller
digital temperature sensor
EEPROM reprogrammable fuses
electronic toll collection (ETC) system
epilepsy
feature extraction
image classification
implantable medical device
integrated circuits
iterative-delay-chain discharge
leaky integrate and fire
low power consumption
low-noise amplifier
low-power
memory cells
multichannel neural recording
multiphase operation
negative temperature coefficient
neuromorphic
nonlinear distortion
piezoresistive
power management
power mode
pressure sensor
pseudoresistor
reliability
seizure
sensor node
spiking neural network
successive approximation register (SAR)
switched capacitor
temperature compensation
temperature sensor with digital serial interface
trimming techniques with fuses
variable frequency
voltage converter
wake-up receiver
wide load range
wireless access in vehicular environments (WAVE)
wireless sensor networks
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580214903321
Serra-Graells Francesc  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (352 p.)
Soggetto topico Mathematics & science
Research & information: general
Soggetto non controllato 1200 V SiC MOSFET
2D hole gas (2DHG)
4H-SiC
4H-SiC MESFET
active layers
active noise control
AlGaN/GaN HEMTs
avalanche photodiode
average subthreshold swing
band-to-band tunnelling (BTBT)
bandwidth
bias temperature instabilities (BTI)
body diode
circuit design
CMOS
CMOS compatible technology
CMOS device
compact circuit style
confinement effective mass
control gate
core-insulator
defects
device processing
device reliability
DGSOI
diamond
dielectrics
direct source-to-drain tunneling
electron trapping
F-N plot
field effect transistor
field emission
FinFET
FinFETs
flexible transistors
floating gate transistor
GAA
GaN
gate structures
gate-all-around
germanium-around-source gate-all-around TFET (GAS GAA TFET)
grain boundary
HEMT
high gate
high responsivity
IMRD structure
integrated circuits
Landauer-Büttiker formalism
mean free path
MESFET
metal oxides
MoO3
mosfet
MOSFET
multi-recessed buffer
multi-subband ensemble Monte Carlo
multiple epitaxial layers
n/a
nanocomposites
nanoscale
nanoscale transistor
nanotransistor
nanowire
new device
non-equilibrium Green's function
non-radiative multiphonon (NMP) model
one-transistor dynamic random-access memory (1T-DRAM)
oxide defects
particle trajectory model
polymers
polysilicon
power added efficiency
power added efficiency (PAE)
power density
power-added efficiency
prototype
pulse width
quantum current
quantum transport
R-matrix method
random telegraph noise
reliability
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
silicon photodiode
silvaco simulation
simulation
single-defect spectroscopy
SiO2
solid state circuit breaker (SSCB)
space-charge-limited currents
specific on-resistance
SPICE model
split-gate trench power MOSFET
surface transfer doping
surge reliability
T-channel
thermal simulation
three-input transistor
time-dependent defect spectroscopy
transient channel temperature
transport effective mass
tunnelling field-effect transistor (TFET)
V2O5
vacuum channel
vertical air-channel diode
vertical transistor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap
Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap
Autore Zhou Zhixian
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2017
Descrizione fisica 1 electronic resource (VIII, 143 p.)
Soggetto topico Physics
Soggetto non controllato WSe2
integrated circuits
MoS2
light-emitting diodes
heterojunctions
graphene
MoSe2
van der Waal heterostructures
MoTe2
photovoltaic cells
lasers
photodetectors
transition metal dichalcogenides
ReS2
field effect transistors
WS2
TMDCs
two-dimensional materials
heterostructures
ReSe2
ISBN 9783038424932
3038424935
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910220062903321
Zhou Zhixian  
MDPI - Multidisciplinary Digital Publishing Institute, 2017
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui