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Integrated Circuits and Systems for Smart Sensory Applications
| Integrated Circuits and Systems for Smart Sensory Applications |
| Autore | Serra-Graells Francesc |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (206 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
wake-up receiver
digital controller reliability electronic toll collection (ETC) system dedicated short range communication (DSRC) temperature compensation piezoresistive pressure sensor negative temperature coefficient ACE-Q100 CMOS epilepsy seizure multichannel neural recording feature extraction closed-loop neurostimulator low-power low-noise amplifier implantable medical device switched capacitor voltage converter wide load range multiphase operation variable frequency integrated circuits EEPROM reprogrammable fuses memory cells trimming techniques with fuses digital temperature sensor temperature sensor with digital serial interface asynchronous control logic successive approximation register (SAR) wireless access in vehicular environments (WAVE) low power consumption capacitive digital to analog converter (CDAC) CMOS neural amplifier AC coupling pseudoresistor nonlinear distortion area-efficient design sensor node power mode wireless sensor networks power management spiking neural network leaky integrate and fire neuromorphic artificial neural networks artificial intelligence image classification capacitance-to-digital converter iterative-delay-chain discharge CMOS capacitive sensor interface |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580214903321 |
Serra-Graells Francesc
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Integrated Circuits ...
Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transis...
Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap
| Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap |
| Autore | Zhou Zhixian |
| Pubbl/distr/stampa | Basel, Switzerland : , : MDPI, , 2017 |
| Descrizione fisica | 1 electronic resource (VIII, 143 p.) |
| Soggetto non controllato |
WSe2
integrated circuits MoS2 light-emitting diodes heterojunctions graphene MoSe2 van der Waal heterostructures MoTe2 photovoltaic cells lasers photodetectors transition metal dichalcogenides ReS2 field effect transistors WS2 TMDCs two-dimensional materials heterostructures ReSe2 |
| ISBN |
9783038424932
3038424935 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910220062903321 |
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Zhou Zhixian
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| Basel, Switzerland : , : MDPI, , 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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