Integrated Circuits and Systems for Smart Sensory Applications
| Integrated Circuits and Systems for Smart Sensory Applications |
| Autore | Serra-Graells Francesc |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (206 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
AC coupling
ACE-Q100 area-efficient design artificial intelligence artificial neural networks asynchronous control logic capacitance-to-digital converter capacitive digital to analog converter (CDAC) closed-loop neurostimulator CMOS CMOS capacitive sensor interface CMOS neural amplifier dedicated short range communication (DSRC) digital controller digital temperature sensor EEPROM reprogrammable fuses electronic toll collection (ETC) system epilepsy feature extraction image classification implantable medical device integrated circuits iterative-delay-chain discharge leaky integrate and fire low power consumption low-noise amplifier low-power memory cells multichannel neural recording multiphase operation negative temperature coefficient neuromorphic nonlinear distortion piezoresistive power management power mode pressure sensor pseudoresistor reliability seizure sensor node spiking neural network successive approximation register (SAR) switched capacitor temperature compensation temperature sensor with digital serial interface trimming techniques with fuses variable frequency voltage converter wake-up receiver wide load range wireless access in vehicular environments (WAVE) wireless sensor networks |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580214903321 |
Serra-Graells Francesc
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Lo trovi qui: Univ. Federico II | ||
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Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap
| Two-Dimensional Electronics and Optoelectronics / Zhixian Zhou, Yoke Yap |
| Autore | Zhou Zhixian |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2017 |
| Descrizione fisica | 1 electronic resource (VIII, 143 p.) |
| Soggetto topico | Physics |
| Soggetto non controllato |
WSe2
integrated circuits MoS2 light-emitting diodes heterojunctions graphene MoSe2 van der Waal heterostructures MoTe2 photovoltaic cells lasers photodetectors transition metal dichalcogenides ReS2 field effect transistors WS2 TMDCs two-dimensional materials heterostructures ReSe2 |
| ISBN |
9783038424932
3038424935 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910220062903321 |
Zhou Zhixian
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| MDPI - Multidisciplinary Digital Publishing Institute, 2017 | ||
| Lo trovi qui: Univ. Federico II | ||
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