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New Trends in Lithium Niobate : From Bulk to Nanocrystals
| New Trends in Lithium Niobate : From Bulk to Nanocrystals |
| Autore | Corradi Gábor |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (382 p.) |
| Soggetto topico | Research and information: general |
| Soggetto non controllato |
acoustic
AFM BAW resonator Bethe-Salpeter equation bipolarons bulk crystals charge localization chemical composition chemical vapor deposition crystal structure defect structure and generation defects density-functional theory diluted-magnetic oxides domain walls domain-wall conduction electro-optical devices electro-optics electron nuclear double resonance electron paramagnetic resonance elemental doping epitaxy extended phase matching extrinsic defects ferroelectric domains ferroelectrics ferromagnetism high-temperature hyperfine interactions impurity intrinsic defect intrinsic defects ion beam analysis lanthanides lattice deformation lattice location lead-free piezoelectrics Li diffusion LiNbO3 liquid phase epitaxy LiTaO3 lithium lithium niobate lithium niobate-tantalate lithium tantalate lithium tantalate thin film lithium vacancy LNOI luminescence Marcus-Holstein's theory microring resonator mode-locked laser molecular beam epitaxy Monte Carlo simulations nanocrystals nanoparticles nanopowders niobate nonlinear mirror mode locking optical response oxide crystals oxygen vacancies paramagnetic ion parametric down-conversion photon-pair generation photorefractivity piezoelectric piezoresponse force microscopy polarons pulsed laser deposition Q-factor radiation damage Raman scattering Raman spectroscopy second harmonic generation second-harmonic generation self-trapped electrons sensor small polaron hopping sputtering strontium titanate temperature dependence of electroconductivity TFLN thin film thin film lithium niobate thin films transient absorption varFDTD whispering gallery resonators x-cut LN X-ray diffraction |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | New Trends in Lithium Niobate |
| Record Nr. | UNINA-9910557609903321 |
Corradi Gábor
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Properties of Transition Metals and Their Compounds at Extreme Conditions
| Properties of Transition Metals and Their Compounds at Extreme Conditions |
| Autore | Anzellini Simone |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (254 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
Al-Si alloy
atomic displacement bulk modulus commercial purity aluminum compression creep testing Debye temperature density-functional theory Earth's core electrical resistivity equation of state eutectic spacing extreme conditions Ganymede grain refinement high pressure high temperature high-pressure high-temperature infrared spectroscopy iodate iridium iron alloys iron sulfides kagome compound laser heating laser-heated diamond anvil cell local atomic structure low temperature magnesium alloy ME21 mechanical properties melting melting curve melting curves miniature specimen multi-phase materials n/a Nb3Sn PbTe phase relation phase transitions quantum molecular dynamics radial-distribution function size effects solid-solid phase transition boundary substitutional disorder superheat synchrotron radiation thermal convection thermal expansion thermodynamics transition metals vanadate X-ray diffraction XAFS zirconium |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557539503321 |
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Anzellini Simone
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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