Multifunctional Oxide-Based Materials: From Synthesis to Application |
Autore | Jesionowski Teofil |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (202 p.) |
Soggetto non controllato |
environment pollution
Ti6Al4V titanium alloy polypropylene antibacterial physicochemical and morphological properties nanocomposites silica–lignin hybrid materials hazardous metals hierarchical oxyanions surface free energy CO2 capture dyes decolorization organic dyes decomposition mesoporous organosilica metal oxides surface layer mechanical properties ozone treatment adsorbents self-propagating molybdenum disulfide hybrid materials zirconia binary systems thermoplastic elastomers biodegradation sorption alumina binary oxide material porous hybrid adsorbents Ag-ZnO enzyme immobilization actinide photocatalysis aqueous durability zinc oxide inorganic oxide materials surface functionalization laccase nuclear waste water purification titanium dioxide polylactide zirconolite adhesive joint sol-gel method |
ISBN | 3-03921-398-9 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Altri titoli varianti | Multifunctional Oxide-Based Materials |
Record Nr. | UNINA-9910367563403321 |
Jesionowski Teofil | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling |
Autore | Li Qiliang |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
Descrizione fisica | 1 electronic resource (242 p.) |
Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
ISBN | 3-03921-226-5 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910346664303321 |
Li Qiliang | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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