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MEMS Packaging Technologies and 3D Integration
| MEMS Packaging Technologies and 3D Integration |
| Autore | Seok Seonho |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto topico |
Research & information: general
Biology, life sciences |
| Soggetto non controllato |
heterogeneous integration
wafer bonding wafer sealing room-temperature bonding Au-Au bonding surface activated bonding Au film thickness surface roughness microelectromechanical systems (MEMS) packaging inkjet printing redistribution layers capacitive micromachined ultrasound transducers (CMUT) fan-out wafer-level packaging (FOWLP) adhesion thin film metal parylene neural probe scotch tape test FEM MEMS resonator temperature coefficient thermal stress millimeter-wave redundant TSV equivalent circuit model S-parameters extraction technology evaluation MEMS and IC integration MCDM fuzzy AHP fuzzy VIKOR fan-out wafer-level package finite element glass substrate reliability life packaging-on-packaging thermal sensors TMOS sensor finite difference time domain optical and electromagnetics simulations finite element analysis ultrasonic bonding metal direct bonding microsystem integration biocompatible packaging implantable reliability Finite element method (FEM) simulation multilayer reactive bonding integrated nanostructure-multilayer reactive system spontaneous self-ignition self-propagating exothermic reaction Pd/Al reactive multilayer system Ni/Al reactive multilayer system low-temperature MEMS packaging crack propagation microbump deflection angle stress intensity factor (SIF) polymer packaging neural interface chronic implantation |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910576876203321 |
Seok Seonho
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| MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Photonics Bloom
| Silicon Photonics Bloom |
| Autore | Boyraz Ozdal |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (184 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
quantum dot
silicon nanocrystals light emitting diode vertical grating coupler WDM transmitter optical interconnects silicon photonics silicon optical modulator Silicon Photonics off-chip coupling polarisation controller integrated polarimeter polarisation multiplexing polarisation shift keying germanium integrated optics optoelectronics photoconductivity terahertz frequency combs heterogeneous integration second-harmonic generation supercontinuum integrated photonics mode-locked lasers nonlinear optics microelectromechanical systems (MEMS) electrostatic actuator parallel plate actuation optical switch silicon-on-insulator (SOI) micro-platform optical waveguide silicon nitride photonics phase change material integrated silicon photonic circuits nanophononics modulator multimode interferometer photonics integrated circuit carrier plasma Mach-Zehnder interferometers silicon oxynitride thin film photoluminescence chemical vapor deposition physical vapor deposition dispersion control Bragg gratings photonic processors unitary transformation amorphous silicon oxycarbide nitrogen doping defect plasma enhanced chemical vapor deposition |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557287403321 |
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Boyraz Ozdal
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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