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MEMS Packaging Technologies and 3D Integration
MEMS Packaging Technologies and 3D Integration
Autore Seok Seonho
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (210 p.)
Soggetto topico Biology, life sciences
Research & information: general
Soggetto non controllato adhesion
Au film thickness
Au-Au bonding
biocompatible packaging
capacitive micromachined ultrasound transducers (CMUT)
chronic implantation
crack propagation
deflection angle
equivalent circuit model
fan-out wafer-level package
fan-out wafer-level packaging (FOWLP)
FEM
finite difference time domain
finite element
finite element analysis
Finite element method (FEM)
fuzzy AHP
fuzzy VIKOR
glass substrate
heterogeneous integration
implantable
inkjet printing
integrated nanostructure-multilayer reactive system
low-temperature MEMS packaging
MCDM
MEMS and IC integration
MEMS resonator
metal direct bonding
microbump
microelectromechanical systems (MEMS) packaging
microsystem integration
millimeter-wave
multilayer reactive bonding
n/a
neural interface
neural probe
Ni/Al reactive multilayer system
optical and electromagnetics simulations
packaging-on-packaging
parylene
Pd/Al reactive multilayer system
polymer packaging
redistribution layers
redundant TSV
reliability
reliability life
room-temperature bonding
S-parameters extraction
scotch tape test
self-propagating exothermic reaction
simulation
spontaneous self-ignition
stress intensity factor (SIF)
surface activated bonding
surface roughness
technology evaluation
temperature coefficient
thermal sensors
thermal stress
thin film metal
TMOS sensor
ultrasonic bonding
wafer bonding
wafer sealing
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910576876203321
Seok Seonho  
MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Silicon Photonics Bloom
Silicon Photonics Bloom
Autore Boyraz Ozdal
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 online resource (184 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato amorphous silicon oxycarbide
Bragg gratings
carrier plasma
chemical vapor deposition
defect
dispersion control
electrostatic actuator
frequency combs
germanium
heterogeneous integration
integrated optics
integrated photonics
integrated polarimeter
integrated silicon photonic circuits
light emitting diode
Mach-Zehnder interferometers
micro-platform
microelectromechanical systems (MEMS)
mode-locked lasers
modulator
multimode interferometer
n/a
nanophononics
nitrogen doping
nonlinear optics
off-chip coupling
optical interconnects
optical switch
optical waveguide
optoelectronics
parallel plate actuation
phase change material
photoconductivity
photoluminescence
photonic processors
photonics integrated circuit
physical vapor deposition
plasma enhanced chemical vapor deposition
polarisation controller
polarisation multiplexing
polarisation shift keying
quantum dot
second-harmonic generation
silicon nanocrystals
silicon nitride photonics
silicon optical modulator
silicon oxynitride
silicon photonics
Silicon Photonics
silicon-on-insulator (SOI)
supercontinuum
terahertz
thin film
unitary transformation
vertical grating coupler
WDM transmitter
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557287403321
Boyraz Ozdal  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Autore Verzellesi Giovanni
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 online resource (320 p.)
Soggetto topico Energy industries and utilities
History of engineering and technology
Technology: general issues
Soggetto non controllato 2DEG
AlGaN/GaN
AlGaN/GaN heterojunction
AlGaN/GaN heterostructures
AlN
AlN buffer layer
aluminum nitride
annealing temperature
auto-compensation
band structure
bias stability
blue and yellow luminescence
breakdown field
breakdown voltage
buffer layer
carbon doping
charge traps
compensation ratio
crystal growth
crystallite size
cubic and hexagonal structure
current collapse
density functional theory
density of states
digital signal processor
driving technology
dry processing
electrochromic device
electron lifetime
energy storage system
equivalent-circuit modeling
fabrication
first-principles
gallium nitride
gallium nitride (GaN)
GaN
GaN power HEMTs
GaN-based LED
GaN-HEMT mesa structures
gate bias modulation
heterogeneous integration
high electron mobility transistor
high electron mobility transistor (HEMT)
high electron-mobility transistor (HEMT)
high-electron mobility devices
high-electron mobility transistor
high-temperature
HTA
HVPE
indium oxide thin film
laser micromachining
laser processing
laser thermal separation
low defect density
low-resistance SiC substrate
magnetron sputtering
metal-oxide-semiconductor field effect transistor (MOSFET)
microwave frequency
MIS-HEMTs
n/a
NH3 growth interruption
nickel oxide
nitridation
nitrogen dioxide gas sensor
noise
non-polar
normally off
optical absorption
optical band gap
p-GaN gate
p-GaN gate HEMT
p-type doping
palladium catalyst
photovoltaic module
piezoelectric micromachined ultrasonic transducers
plasma surface treatment
polar
power conditioning system
pure β-Ga2O3
QST
radio frequency
radio frequency sputtering
ranging
rectifying electrode
sapphire
scattering-parameter measurements
Schottky barrier diode
Schottky barrier diodes
semi-polar
SiC
silicon carbide
silicon carbide (SiC)
SOI
solution method
Sr-doped β-Ga2O3
stealth dicing
strain relaxation
supercritical technology
synchronous buck converter
temperature
threshold voltage stability
time of flight (TOF)
time to digital converter circuit (TDC)
unidirectional operation
vanadium redox flow batteries
wafer dicing
wide bandgap semiconductor
wide-bandgap (WBG)
X-ray diffraction
X-ray imaging
X-ray photoelectron spectroscopy
X-ray sensor
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910576886103321
Verzellesi Giovanni  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui