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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (438 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
vertical GaN
quasi-vertical GaN reliability trapping degradation MOS trench MOS threshold voltage nanomanufacturing high-throughput method material printing flexible bioelectronics nanomembrane hybrid integration GaAs InGaAs channel epitaxial lift-off HEMT van der Waals 3C-SiC stacking faults doping KOH etching silicon carbide radiation hardness proton and electron irradiation charge removal rate compensation irradiation temperature heteroepitaxy bulk growth compliant substrates defects stress cubic silicon carbide power electronics thin film iron-based superconductor pulsed laser deposition transmission electron microscopy diamond MPCVD growth electron microscopy chemical vapour deposition 2D materials MoS2 silica point defects optical fibers radiation effects 4H-SiC ohmic contact SIMS Ti3SiC2 simulation Schottky barrier Schottky diodes electrical characterization graphene absorption Fabry–Perot filter radio frequency sputtering CVD graphene GaN thermal management GaN-on-diamond CVD arrhythmia detection cardiovascular monitoring soft biosensors wearable sensors flexible electronics gate dielectric aluminum oxide interface traps instability insulators binary oxides high-κ dielectrics wide band gap semiconductors energy electronics ultra-wide bandgap diodes transistors gallium oxide Ga2O3 spinel ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI Books, 2022 |
| Descrizione fisica | 1 electronic resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
silicon
yolk−shell structure anode lithium-ion batteries in-plane nanowire site-controlled epitaxial growth germanium nanowire-based quantum devices HfO2/Si0.7Ge0.3 gate stack ozone oxidation Si-cap interface state density passivation GOI photodetectors dark current responsivity prussian blue nanoparticles organotrialkoxysilane silica beads arsenite arsenate water decontamination vertical gate-all-around (vGAA) digital etch quasi-atomic-layer etching (q-ALE) selective wet etching HNO3 concentration doping effect vertical Gate-all-around (vGAA) p+-Ge0.8Si0.2/Ge stack dual-selective wet etching atomic layer etching (ALE) stacked SiGe/Si epitaxial grown Fin etching FinFET short-term potentiation (STP) long-term potentiation (LTP) charge-trap synaptic transistor band-to-band tunneling pattern recognition neural network neuromorphic system Si-MOS quantum dot spin qubits quantum computing GeSn CVD lasers detectors transistors III-V on Si heteroepitaxy threading dislocation densities (TDDs) anti-phase boundaries (APBs) selective epitaxial growth (SEG) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI Books, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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