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Feature Papers in Electronic Materials Section
| Feature Papers in Electronic Materials Section |
| Autore | Roccaforte Fabrizio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (438 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2D materials
3C-SiC 4H-SiC aluminum oxide arrhythmia detection binary oxides bulk growth cardiovascular monitoring charge removal rate chemical vapour deposition compensation compliant substrates cubic silicon carbide CVD CVD graphene defects degradation diamond diodes doping electrical characterization electron microscopy energy electronics epitaxial lift-off Fabry-Perot filter flexible bioelectronics flexible electronics Ga2O3 GaAs gallium oxide GaN GaN-on-diamond gate dielectric graphene absorption HEMT heteroepitaxy high-throughput method high-κ dielectrics hybrid integration InGaAs channel instability insulators interface iron-based superconductor irradiation temperature KOH etching material printing MOS MoS2 MPCVD growth nanomanufacturing nanomembrane ohmic contact optical fibers power electronics proton and electron irradiation pulsed laser deposition quasi-vertical GaN radiation effects radiation hardness radio frequency sputtering reliability Schottky barrier Schottky diodes silica point defects silicon carbide SIMS simulation soft biosensors spinel stacking faults stress thermal management thin film threshold voltage Ti3SiC2 transistors transmission electron microscopy trapping traps trench MOS ultra-wide bandgap van der Waals vertical GaN wearable sensors wide band gap semiconductors ZnGa2O4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557620303321 |
Roccaforte Fabrizio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
anode
anti-phase boundaries (APBs) arsenate arsenite atomic layer etching (ALE) band-to-band tunneling charge-trap synaptic transistor CVD dark current detectors digital etch doping effect dual-selective wet etching epitaxial grown epitaxial growth Fin etching FinFET germanium GeSn GOI heteroepitaxy HfO2/Si0.7Ge0.3 gate stack HNO3 concentration III-V on Si in-plane nanowire interface state density lasers lithium-ion batteries long-term potentiation (LTP) n/a nanowire-based quantum devices neural network neuromorphic system organotrialkoxysilane ozone oxidation p+-Ge0.8Si0.2/Ge stack passivation pattern recognition photodetectors prussian blue nanoparticles quantum computing quantum dot quasi-atomic-layer etching (q-ALE) responsivity selective epitaxial growth (SEG) selective wet etching short-term potentiation (STP) Si-cap Si-MOS silica beads silicon site-controlled spin qubits stacked SiGe/Si threading dislocation densities (TDDs) transistors vertical gate-all-around (vGAA) vertical Gate-all-around (vGAA) water decontamination yolk−shell structure |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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