Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
Filipovic Lado
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (96 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
aspect ratio of channel cross-section
charge transport CMOS circuit conduction mechanism constriction Coulomb interaction DC and AC characteristic fluctuations device simulation dimensionality reduction drift-diffusion electron-phonon interaction fabrication field effect transistor gate-all-around geometric correlations heat equation hot electrons III-V Integration Kubo-Greenwood formalism lowest order approximation material properties metal gate modelling Monte Carlo MOSFETs nano-cooling nano-transistors nanodevice nanojunction nanowire nanowire field-effect transistors nanowire transistor noise margin fluctuation non-equilibrium Green functions nonequilibrium Green's function one-dimensional multi-subband scattering models Padé approximants phonon-phonon interaction power dissipation power fluctuation quantum confinement quantum electron transport quantum modeling quantum transport random dopant Richardson extrapolation Schrödinger based quantum corrections schrödinger-poisson solvers screening self-consistent Born approximation self-cooling silicon nanomaterials silicon nanowires statistical device simulation stochastic Schrödinger equations TASE thermoelectricity timing fluctuation variability variability effects work function fluctuation ZnO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
|
García-Loureiro Antonio
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||