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Alternative Sources of Energy Modeling, Automation, Optimal Planning and Operation
| Alternative Sources of Energy Modeling, Automation, Optimal Planning and Operation |
| Autore | Stavrakakis George S |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (250 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
entrained flow coal gasification
ash melting point operation temperature Markov process stochastic optimization model genetic algorithm gallium nitride magnetic-free converters module-level converters parallel architecture partial shading photovoltaic systems switched capacitor converters hybrid energy storage system supercapacitor lead–acid battery energy management system battery degradation depth of discharge techno-economic analysis hybrid power station green island energy storage remote community reserves k-means probabilistic dimensioning dynamic dimensioning balancing wave energy converters deep neural networks renewable energy sources spatial planning sentinel satellite imagery permanent magnet synchronous machines generators fault detection demagnetization artificial intelligence data mining machine learning advanced deep learning windspeed forecasting solar irradiation forecasting increased RES penetration smart grid scalability replicability FLEXITRANSTORE Angolan economy diversification strategic alternative biofuels |
| ISBN | 3-0365-5712-1 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910637792103321 |
Stavrakakis George S
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Micro- and Nanotechnology of Wide Bandgap Semiconductors
| Micro- and Nanotechnology of Wide Bandgap Semiconductors |
| Autore | Piotrowska Anna B |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (114 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AlGaN
AlGaN/GaN AlGaN/GaN heterostructures AlN ammonothermal method conductance-frequency crystal growth diffusion diffusion coefficients edge effects effective diffusion length gallium nitride gallium nitride nanowires GaN GaN HEMT growth polarity HVPE interface state density ion implantation Kelvin probe force microscopy laser diode LEDs LTE microwave power amplifier MISHEMT molecular beam epitaxy MOVPE n/a nanowires nitrides polarity selective area growth selective epitaxy self-heating effect thermal equivalent circuit thermal impedance thermal time constant thermodynamics tunnel junction ultra-high-pressure annealing |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557343303321 |
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Piotrowska Anna B
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Modelling of Wireless Power Transfer
| Modelling of Wireless Power Transfer |
| Autore | Minnaert Ben |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (148 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
3-coil system
capacitive wireless power transfer circuit modeling Class-E power amplifier coupling coefficient design guidelines design optimization electric field finite element analysis gallium nitride gradient methods impedance matrix inductive coupling inductive power transmission multiple coils multiple-input single-output multiports mutual inductance numerical analysis optimal load output characteristics power gain power measurement power transfer efficiency (PTE) power-transfer efficiency resonance resonance frequency resonance-based wireless power transfer (R-WPT) resonant scattering matrix shielded-capacitive power transfer single-input multiple-output steady-state matrix analysis strength transfer impedance transformer cores wireless charging wireless power transfer wireless power transfer (WPT) system wireless power transmission |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557625703321 |
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Minnaert Ben
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu
| Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN |
9783039212262
3039212265 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
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Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices : Design, Fabrication and Applications
| Wide Bandgap Based Devices : Design, Fabrication and Applications |
| Autore | Medjdoub Farid |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (242 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
4H-SiC
active power filter (APF) AESA radars Ag sinter paste AlGaN/GaN amorphous InGaZnO asymmetric multiple quantum wells barrier thickness breakdown voltage (BV) buffer trapping effect buried-channel composition-graded AlxGa1−xN electron blocking layer (EBL) copper metallization cosolvent direct bonded copper (DBC) substrate distortions distributed feedback (DFB) double barrier electrochromism electron leakage electron leakage current flexible devices gallium nitride gallium nitride (GaN) Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GaN GaN 5G GaN laser diode GaN-based vertical-cavity surface-emitting laser (VCSEL) GaN-on-GaN grooved-anode diode HEMT hierarchical nanostructures high electron mobility transistors high electron mobility transistors (HEMT) high-electron-mobility transistor (HEMT) high-electron-mobility transistors high-energy α-particle detection IGBT InGaN laser diodes jammer system low voltage metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) millimeter wave morphology n/a new radio nitrogen-doping normally off normally-off operation numerical simulation ON-state voltage optical absorption loss optical band gap optimization photon extraction efficiency photonic emitter polyol method power amplifier power cycle test power quality (PQ) power switching device proton irradiation recessed gate reliability RF front-end schottky barrier diodes self-align SiC micro-heater chip sidewall gratings silver nanoring silver nanowire spin coating stability surface gratings terahertz Gunn diode thermal resistance thick depletion width detectors thin-film transistor time-dependent dielectric breakdown (TDDB) transmittance tungsten trioxide film turn-off loss ultra-wide band gap vertical breakdown voltage vertical gate structure wide band gap semiconductors wide band-gap (WBG) wide bandgap semiconductors wide-bandgap semiconductor wideband ZnO nanorod/NiO nanosheet |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910557351703321 |
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Medjdoub Farid
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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