Bridging the Gap in Neuroelectronic Interfaces
| Bridging the Gap in Neuroelectronic Interfaces |
| Autore | Capadona Jeffrey R |
| Pubbl/distr/stampa | Frontiers Media SA, 2020 |
| Descrizione fisica | 1 online resource (378 p.) |
| Soggetto topico |
Neurosciences
Science: general issues |
| Soggetto non controllato |
BBB rupturing
brain implantable devices brain recordings brain stimulation brain-machine interfaces chronic implants flexible substrate neuroprotection |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557250803321 |
Capadona Jeffrey R
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| Frontiers Media SA, 2020 | ||
| Lo trovi qui: Univ. Federico II | ||
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Optoelectronic Nanodevices
| Optoelectronic Nanodevices |
| Autore | Stylianakis Minas M |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (338 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
2D perovskite
actively tunable nanodevices Ag film air-processed AlGaN-based ultraviolet light-emitting diode antireflective coating (ARC) cascade effect cathodoluminescence CdTe microdots charge transfer cold cathode color-conversion efficiency colorimetry compact controllable synthesis counter electrode current spreading double-layer ITO electromagnetically induced transparency effect electrowetting erbium excitation wavelength external quantum efficiency FDTD field emission flexible substrate flip-chip mini-LED Fowler-Nordheim functionalization Ga2O3 GaN gold split-ring graded indium composition graphene graphene ink graphene oxide graphene split-ring green LED green LEDs high-efficiency hole injection indium nanoparticles (In NPs) InGaN/GaN superlattice InN/p-GaN heterojunction interface LED light extraction light output power light-emitting diode light-emitting diodes liquid crystals localized surface plasmon metamaterials metasurfaces mid infrared n/a nano-grating NiCo2S4 nanotubes nucleation layer OAB organic organic solar cell orthogonal polarization oxidation p-type InGaN PeLEDs perovskite perovskite solar cells photocurrent photodetector photoelectric performance photoluminescence photomultiplication photovoltaics piezo-phototronic effect pinhole pattern plasmon resonance plasmonic forward scattering plasmonics polarization analyzer polymer composites prism-structured sidewall quantum confinement effect quantum dot quantum dots quantum efficiency reduced graphene oxide Schottky barrier sheet resistance silicon transistor smooth solar cells solvent stability subwavelength metal grating ternary organic solar cells textured silicon solar cells Ti porous film transmittance transparent conductive electrode transparent electrode tunable absorbers tunneling UV LEDs V-pits waveguide photons |
| ISBN | 3-03928-697-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090103321 |
Stylianakis Minas M
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Lo trovi qui: Univ. Federico II | ||
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Preparation and Properties of 2D Materials
| Preparation and Properties of 2D Materials |
| Autore | Cho Byungjin |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (142 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
2D heterostructure
2D/2D heterojunction atomic crystal band-to-band tunneling (BTBT) bias stress stability bilayer-stacked structure black phosphorus carbon nitride chemical vapor deposition contact resistance disorder ferroelectrics few-layer MoS2 film-substrate interaction flexible substrate g-C3N4 interfacial layer junction FET Langmuir-Blodgett technique liquid exfoliation lubricant additives magnetron sputtering magnetron sputtering power mechanical exfoliation molybdenum disulfide molybdenum trioxide MoS2 MoS2 nanosheet n/a nanoplates natural molybdenite Nb2O5 interlayer NbSe2 neuromorphic system P-doped MoS2 p-type conduction P2O5 photoelectric properties photoluminescence Q-switched laser raman spectroscopy Raman spectroscopy saturable absorbers scanning Kelvin probe microscopy SiO2 synapse device synthesis transition metal dichalcogenides tribological properties tunneling diode tunneling FET two-dimensional materials uniaxial strain V2Se9 WS2 WSe2 α-MoO3 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557292403321 |
Cho Byungjin
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Lo trovi qui: Univ. Federico II | ||
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