top

  Info

  • Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.

  Info

  • Utilizzare questo link per rimuovere la selezione effettuata.
Advances in Chemical Vapor Deposition
Advances in Chemical Vapor Deposition
Autore Vernardou Dimitra
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (94 p.)
Soggetto topico Technology: general issues
Soggetto non controllato APCVD
VO2
processing parameters
2D
chemical vapor deposition
atomic layer deposition
aluminum oxide
aluminum tri-sec-butoxide
thin film
carbon nanotubes
residual gas adsorption
residual gas desorption
field emission
atmospheric pressure CVD
low pressure CVD
hybrid CVD
aerosol assisted CVD
pulsed CVD
perovskite photovoltaic nanomaterials
stabilization
structural design
performance optimization
solar cells
anatase single crystals
process-induced nanostructures
competitive growth
pp-MOCVD
vanadium pentoxide
electrochromic
spray pyrolysis
ammonium metavanadate
CVD
electrochromism
perovskite photovoltaic materials
TiO2
Al2O3
V2O5
computational fluid dynamics
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557748803321
Vernardou Dimitra  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
MEMS Accelerometers
MEMS Accelerometers
Autore Ngo Ha Duong
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (252 p.)
Soggetto non controllato micromachining
turbulent kinetic energy dissipation rate
microelectromechanical systems (MEMS) piezoresistive sensor chip
WiFi-RSSI radio map
step detection
built-in self-test
regularity of activity
motion analysis
gait analysis
frequency
acceleration
MEMS accelerometer
zero-velocity update
rehabilitation assessment
vacuum microelectronic
dance classification
Kerr noise
MEMS
micro machining
MEMS sensors
stereo visual-inertial odometry
self-coaching
miniaturization
wavelet packet
three-axis acceleration sensor
MEMS-IMU accelerometer
performance characterization
electrostatic stiffness
delaying mechanism
three-axis accelerometer
angular-rate sensing
indoor positioning
whispering-gallery-mode
sensitivity
heat convection
multi-axis sensing
L-shaped beam
stride length estimation
activity monitoring
process optimization
mismatch of parasitic capacitance
electromechanical delta-sigma
cathode tips array
in situ self-testing
high acceleration sensor
deep learning
marine environmental monitoring
accelerometer
fault tolerant
hostile environment
micro-electro-mechanical systems (MEMS)
low-temperature co-fired ceramic (LTCC)
classification of horse gaits
Taguchi method
interface ASIC
capacitive transduction
digital resonator
safety and arming system
inertial sensors
MEMS technology
sleep time duration detection
field emission
probe
piezoresistive effect
capacitive accelerometer
auto-encoder
MEMS-IMU
body sensor network
optical microresonator
wireless
hybrid integrated
mode splitting
ISBN 3-03897-415-3
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346853503321
Ngo Ha Duong  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Miniaturized Transistors, Volume II
Miniaturized Transistors, Volume II
Autore Filipovic Lado
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (352 p.)
Soggetto topico Research & information: general
Mathematics & science
Soggetto non controllato FinFETs
CMOS
device processing
integrated circuits
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
solid state circuit breaker (SSCB)
prototype
circuit design
GaN
HEMT
high gate
multi-recessed buffer
power density
power-added efficiency
4H-SiC
MESFET
IMRD structure
power added efficiency
1200 V SiC MOSFET
body diode
surge reliability
silvaco simulation
floating gate transistor
control gate
CMOS device
active noise control
vacuum channel
mean free path
vertical air-channel diode
vertical transistor
field emission
particle trajectory model
F-N plot
space-charge-limited currents
4H-SiC MESFET
simulation
power added efficiency (PAE)
new device
three-input transistor
T-channel
compact circuit style
CMOS compatible technology
avalanche photodiode
SPICE model
bandwidth
high responsivity
silicon photodiode
AlGaN/GaN HEMTs
thermal simulation
transient channel temperature
pulse width
gate structures
band-to-band tunnelling (BTBT)
tunnelling field-effect transistor (TFET)
germanium-around-source gate-all-around TFET (GAS GAA TFET)
average subthreshold swing
direct source-to-drain tunneling
transport effective mass
confinement effective mass
multi-subband ensemble Monte Carlo
non-equilibrium Green's function
DGSOI
FinFET
core-insulator
gate-all-around
field effect transistor
GAA
nanowire
one-transistor dynamic random-access memory (1T-DRAM)
polysilicon
grain boundary
electron trapping
flexible transistors
polymers
metal oxides
nanocomposites
dielectrics
active layers
nanotransistor
quantum transport
Landauer-Büttiker formalism
R-matrix method
nanoscale
mosfet
quantum current
surface transfer doping
2D hole gas (2DHG)
diamond
MoO3
V2O5
MOSFET
reliability
random telegraph noise
oxide defects
SiO2
split-gate trench power MOSFET
multiple epitaxial layers
specific on-resistance
device reliability
nanoscale transistor
bias temperature instabilities (BTI)
defects
single-defect spectroscopy
non-radiative multiphonon (NMP) model
time-dependent defect spectroscopy
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910580205803321
Filipovic Lado  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Optoelectronic Nanodevices
Optoelectronic Nanodevices
Autore Stylianakis Minas M
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 electronic resource (338 p.)
Soggetto non controllato graphene oxide
textured silicon solar cells
high-efficiency
CdTe microdots
piezo-phototronic effect
electromagnetically induced transparency effect
waveguide photons
light output power
hole injection
ternary organic solar cells
UV LEDs
cathodoluminescence
V-pits
quantum confinement effect
nano-grating
metamaterials
Ga2O3
tunneling
transmittance
graphene ink
perovskite solar cells
counter electrode
nucleation layer
Ag film
AlGaN-based ultraviolet light-emitting diode
color-conversion efficiency
PeLEDs
photoelectric performance
photocurrent
charge transfer
double-layer ITO
green LED
liquid crystals
photovoltaics
electrowetting
oxidation
Fowler-Nordheim
field emission
excitation wavelength
functionalization
quantum dots
gold split-ring
cascade effect
erbium
transparent conductive electrode
compact
plasmon resonance
air-processed
FDTD
prism-structured sidewall
sheet resistance
GaN
Ti porous film
stability
flip-chip mini-LED
flexible substrate
actively tunable nanodevices
green LEDs
metasurfaces
antireflective coating (ARC)
NiCo2S4 nanotubes
InN/p-GaN heterojunction
InGaN/GaN superlattice
OAB
graded indium composition
plasmonics
polymer composites
photomultiplication
cold cathode
solvent
solar cells
controllable synthesis
tunable absorbers
interface
graphene
silicon transistor
colorimetry
light extraction
reduced graphene oxide
pinhole pattern
indium nanoparticles (In NPs)
graphene split-ring
organic solar cell
light-emitting diode
organic
plasmonic forward scattering
smooth
subwavelength metal grating
perovskite
photoluminescence
mid infrared
polarization analyzer
transparent electrode
external quantum efficiency
LED
light-emitting diodes
photodetector
p-type InGaN
quantum efficiency
2D perovskite
quantum dot
orthogonal polarization
current spreading
localized surface plasmon
Schottky barrier
ISBN 3-03928-697-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910404090103321
Stylianakis Minas M  
MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui