top

  Info

  • Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.

  Info

  • Utilizzare questo link per rimuovere la selezione effettuata.
Optoelectronic Nanodevices
Optoelectronic Nanodevices
Autore Stylianakis Minas M
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 online resource (338 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato 2D perovskite
actively tunable nanodevices
Ag film
air-processed
AlGaN-based ultraviolet light-emitting diode
antireflective coating (ARC)
cascade effect
cathodoluminescence
CdTe microdots
charge transfer
cold cathode
color-conversion efficiency
colorimetry
compact
controllable synthesis
counter electrode
current spreading
double-layer ITO
electromagnetically induced transparency effect
electrowetting
erbium
excitation wavelength
external quantum efficiency
FDTD
field emission
flexible substrate
flip-chip mini-LED
Fowler-Nordheim
functionalization
Ga2O3
GaN
gold split-ring
graded indium composition
graphene
graphene ink
graphene oxide
graphene split-ring
green LED
green LEDs
high-efficiency
hole injection
indium nanoparticles (In NPs)
InGaN/GaN superlattice
InN/p-GaN heterojunction
interface
LED
light extraction
light output power
light-emitting diode
light-emitting diodes
liquid crystals
localized surface plasmon
metamaterials
metasurfaces
mid infrared
n/a
nano-grating
NiCo2S4 nanotubes
nucleation layer
OAB
organic
organic solar cell
orthogonal polarization
oxidation
p-type InGaN
PeLEDs
perovskite
perovskite solar cells
photocurrent
photodetector
photoelectric performance
photoluminescence
photomultiplication
photovoltaics
piezo-phototronic effect
pinhole pattern
plasmon resonance
plasmonic forward scattering
plasmonics
polarization analyzer
polymer composites
prism-structured sidewall
quantum confinement effect
quantum dot
quantum dots
quantum efficiency
reduced graphene oxide
Schottky barrier
sheet resistance
silicon transistor
smooth
solar cells
solvent
stability
subwavelength metal grating
ternary organic solar cells
textured silicon solar cells
Ti porous film
transmittance
transparent conductive electrode
transparent electrode
tunable absorbers
tunneling
UV LEDs
V-pits
waveguide photons
ISBN 3-03928-697-8
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910404090103321
Stylianakis Minas M  
MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
Autore Seo Jung-Hun
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (138 p.)
Soggetto topico History of engineering and technology
Soggetto non controllato ohmic contact
MESFET
optical band gap
wide-bandgap semiconductor
annealing temperature
junction termination extension (JTE)
channel length modulation
silicon carbide (SiC)
amorphous InGaZnO (a-IGZO)
light output power
GaN
electrochromism
large signal performance
passivation layer
4H-SiC
positive gate bias stress (PGBS)
asymmetric power combining
ultrahigh upper gate height
high electron mobility transistors
space application
gallium nitride (GaN)
phase balance
edge termination
distributed Bragg reflector
cathode field plate (CFP)
ammonothermal GaN
anode field plate (AFP)
W band
GaN high electron mobility transistor (HEMT)
1T DRAM
growth of GaN
tungsten trioxide film
thin-film transistor (TFT)
micron-sized patterned sapphire substrate
power added efficiency
T-anode
analytical model
AlGaN/GaN
harsh environment
high-temperature operation
amplitude balance
buffer layer
characteristic length
Ku-band
DIBL effect
I-V kink effect
flip-chip light-emitting diodes
high electron mobility transistors (HEMTs)
power amplifier
sidewall GaN
external quantum efficiency
breakdown voltage (BV)
threshold voltage (Vth) stability
regrown contact
AlGaN/GaN HEMT
TCAD
high electron mobility transistor (HEMT)
ISBN 9783038978435
3038978434
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346846903321
Seo Jung-Hun  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui