Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Optoelectronic Nanodevices
| Optoelectronic Nanodevices |
| Autore | Stylianakis Minas M |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (338 p.) |
| Soggetto non controllato |
graphene oxide
textured silicon solar cells high-efficiency CdTe microdots piezo-phototronic effect electromagnetically induced transparency effect waveguide photons light output power hole injection ternary organic solar cells UV LEDs cathodoluminescence V-pits quantum confinement effect nano-grating metamaterials Ga2O3 tunneling transmittance graphene ink perovskite solar cells counter electrode nucleation layer Ag film AlGaN-based ultraviolet light-emitting diode color-conversion efficiency PeLEDs photoelectric performance photocurrent charge transfer double-layer ITO green LED liquid crystals photovoltaics electrowetting oxidation Fowler-Nordheim field emission excitation wavelength functionalization quantum dots gold split-ring cascade effect erbium transparent conductive electrode compact plasmon resonance air-processed FDTD prism-structured sidewall sheet resistance GaN Ti porous film stability flip-chip mini-LED flexible substrate actively tunable nanodevices green LEDs metasurfaces antireflective coating (ARC) NiCo2S4 nanotubes InN/p-GaN heterojunction InGaN/GaN superlattice OAB graded indium composition plasmonics polymer composites photomultiplication cold cathode solvent solar cells controllable synthesis tunable absorbers interface graphene silicon transistor colorimetry light extraction reduced graphene oxide pinhole pattern indium nanoparticles (In NPs) graphene split-ring organic solar cell light-emitting diode organic plasmonic forward scattering smooth subwavelength metal grating perovskite photoluminescence mid infrared polarization analyzer transparent electrode external quantum efficiency LED light-emitting diodes photodetector p-type InGaN quantum efficiency 2D perovskite quantum dot orthogonal polarization current spreading localized surface plasmon Schottky barrier |
| ISBN | 3-03928-697-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090103321 |
Stylianakis Minas M
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
|
Seo Jung-Hun
|
||
| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||