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2D Materials and Van der Waals Heterostructures : Physics and Applications
| 2D Materials and Van der Waals Heterostructures : Physics and Applications |
| Autore | Bartolomeo Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (170 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
ZnO/WS2
ZnO/WSe2 photocatalysis hybrid density functional copper vanadate photoanode water splitting graphene oxide Stone–Wales defected graphene half-metallocene adsorption energy density of states and magnetic property palladium selenide monolayer physical properties light-harvesting performance type-II heterostructure first principles calculations 2D materials field effect transistors PMMA tungsten diselenide graphene/MoS2 heterostructure optical properties electronic structure Layer-dependent Indium Selenide density functional theory work function MXene Ti3C2Tx transition metal dichalcogenides surface plasmon resonance sensitivity CdS/g-C3N4 strain-tunable WS2 large-area CVD fluorescence emission Raman mapping mechanical behaviors electronic properties photocatalytic properties graphene Schottky barrier diode photodetector heterojunction MOS (Metal Oxide Semiconductor) capacitor responsivity transition metal dichalcogenide van der Waals heterostructure photodetection photovoltaics |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | 2D Materials and Van der Waals Heterostructures |
| Record Nr. | UNINA-9910557146803321 |
Bartolomeo Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Mesoporous Metal Oxide Films
| Mesoporous Metal Oxide Films |
| Autore | Topoglidis Emmanuel |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (172 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
SnO2
Metglas hemin H2O2 cyclic voltammetry magnetoelastic resonance sensor titanium dioxide mesoporous thin film multi-layered photoanode semiconductor photoelectrochemical water oxidation Mn2O3 mesoporous materials electrochemical characterizations electrode supercapacitors gadolinium oxide hydrazine p-nitrophenol electrochemical sensing amperometric selective sensor nanocrystal ZnO density of states optical and electrical properties TiO2 films Ag nanoparticles optical properties spectroelectrochemistry surface plasmon Fe-doped TiO2 hydrothermal GCE chemical sensor amperometry dye-sensitized solar cells working electrode TiO2 NiO nanoparticles electron transport corrosion guar gum coatings electrochemical impedance spectroscopy (EIS) SECM AFM calcium phosphate silicate PEG bioceramics sol-gel preparation hard tissue engineering metal oxide sol-gel supercapacitor photoelectrode dye sensitized solar cell NiO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557110503321 |
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Topoglidis Emmanuel
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Thin Films for Energy Harvesting, Conversion, and Storage
| Thin Films for Energy Harvesting, Conversion, and Storage |
| Autore | Zhao Xin |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (174 p.) |
| Soggetto non controllato |
photoelectrochemical
transparent conductive electrode lithium ion battery heterojunction Cu2ZnSn(S Ni-rich cathode material anode materials degradation dye-sensitized solar cells electron transfer water splitting energy storage bond population TiO2 nanotube atomic layered deposition PbI2 formation Ge incorporation visible light driven nanosheet arrays surface morphology perfect absorption organic sensitizers energy harvesting electronic structures water Al2O3 oxide thin film Se)4 solar cells energy conversion solar cell polymer nickel oxide metal-dielectric-metal structure color perception annealing nickel-cobalt-molybdenum metal oxide (NCMO) halide perovskite LaFeO3 few-layer graphene nano-flakes photocatalysis organic synthesis perovskite nanoparticle deposition system Fabry–Perot cavity thin films semitransparent coatings density functional theory LiNi0.8Co0.1Mn0.1O2 mixed metal oxides characterization density of states supercapacitor |
| ISBN | 3-03921-725-9 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910367747403321 |
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Zhao Xin
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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