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2D Materials and Van der Waals Heterostructures : Physics and Applications
2D Materials and Van der Waals Heterostructures : Physics and Applications
Autore Bartolomeo Antonio
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 electronic resource (170 p.)
Soggetto topico Technology: general issues
Soggetto non controllato ZnO/WS2
ZnO/WSe2
photocatalysis
hybrid density functional
copper vanadate
photoanode
water splitting
graphene oxide
Stone–Wales defected graphene
half-metallocene
adsorption energy
density of states
and magnetic property
palladium selenide monolayer
physical properties
light-harvesting performance
type-II heterostructure
first principles calculations
2D materials
field effect transistors
PMMA
tungsten diselenide
graphene/MoS2 heterostructure
optical properties
electronic structure
Layer-dependent
Indium Selenide
density functional theory
work function
MXene
Ti3C2Tx
transition metal dichalcogenides
surface plasmon resonance
sensitivity
CdS/g-C3N4
strain-tunable
WS2
large-area
CVD
fluorescence emission
Raman mapping
mechanical behaviors
electronic properties
photocatalytic properties
graphene
Schottky barrier
diode
photodetector
heterojunction
MOS (Metal Oxide Semiconductor) capacitor
responsivity
transition metal dichalcogenide
van der Waals heterostructure
photodetection
photovoltaics
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti 2D Materials and Van der Waals Heterostructures
Record Nr. UNINA-9910557146803321
Bartolomeo Antonio  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Mesoporous Metal Oxide Films
Mesoporous Metal Oxide Films
Autore Topoglidis Emmanuel
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 electronic resource (172 p.)
Soggetto topico History of engineering & technology
Soggetto non controllato SnO2
Metglas
hemin
H2O2
cyclic voltammetry
magnetoelastic resonance
sensor
titanium dioxide
mesoporous
thin film
multi-layered
photoanode
semiconductor
photoelectrochemical water oxidation
Mn2O3
mesoporous materials
electrochemical characterizations
electrode
supercapacitors
gadolinium oxide
hydrazine
p-nitrophenol
electrochemical sensing
amperometric
selective sensor
nanocrystal
ZnO
density of states
optical and electrical properties
TiO2 films
Ag nanoparticles
optical properties
spectroelectrochemistry
surface plasmon
Fe-doped TiO2
hydrothermal
GCE
chemical sensor
amperometry
dye-sensitized solar cells
working electrode
TiO2
NiO nanoparticles
electron transport
corrosion
guar gum
coatings
electrochemical impedance spectroscopy (EIS)
SECM
AFM
calcium phosphate silicate
PEG
bioceramics
sol-gel preparation
hard tissue engineering
metal oxide
sol-gel
supercapacitor
photoelectrode
dye sensitized solar cell
NiO
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557110503321
Topoglidis Emmanuel  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Thin Films for Energy Harvesting, Conversion, and Storage
Thin Films for Energy Harvesting, Conversion, and Storage
Autore Zhao Xin
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (174 p.)
Soggetto non controllato photoelectrochemical
transparent conductive electrode
lithium ion battery
heterojunction
Cu2ZnSn(S
Ni-rich cathode material
anode materials
degradation
dye-sensitized solar cells
electron transfer
water splitting
energy storage
bond population
TiO2 nanotube
atomic layered deposition
PbI2 formation
Ge incorporation
visible light driven
nanosheet arrays
surface
morphology
perfect absorption
organic sensitizers
energy harvesting
electronic structures
water
Al2O3 oxide
thin film
Se)4
solar cells
energy conversion
solar cell
polymer
nickel oxide
metal-dielectric-metal structure
color perception
annealing
nickel-cobalt-molybdenum metal oxide (NCMO)
halide perovskite
LaFeO3
few-layer graphene nano-flakes
photocatalysis
organic
synthesis
perovskite
nanoparticle deposition system
Fabry–Perot cavity
thin films
semitransparent
coatings
density functional theory
LiNi0.8Co0.1Mn0.1O2
mixed metal oxides
characterization
density of states
supercapacitor
ISBN 3-03921-725-9
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910367747403321
Zhao Xin  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Autore Verzellesi Giovanni
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (320 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Energy industries & utilities
Soggetto non controllato energy storage system
power conditioning system
silicon carbide
vanadium redox flow batteries
AlGaN/GaN
SiC
high electron mobility transistor
Schottky barrier diode
breakdown field
noise
charge traps
radio frequency
wide-bandgap (WBG)
gallium nitride (GaN)
silicon carbide (SiC)
high electron mobility transistor (HEMT)
metal-oxide-semiconductor field effect transistor (MOSFET)
driving technology
nickel oxide
annealing temperature
crystallite size
optical band gap
electrochromic device
indium oxide thin film
solution method
plasma surface treatment
bias stability
aluminum nitride
Schottky barrier diodes
radio frequency sputtering
X-ray diffraction
X-ray photoelectron spectroscopy
piezoelectric micromachined ultrasonic transducers
ranging
time of flight (TOF)
time to digital converter circuit (TDC)
AlGaN/GaN heterojunction
p-GaN gate
unidirectional operation
rectifying electrode
first-principles
density functional theory
pure β-Ga2O3
Sr-doped β-Ga2O3
p-type doping
band structure
density of states
optical absorption
AlN buffer layer
NH3 growth interruption
strain relaxation
GaN-based LED
low defect density
gate bias modulation
palladium catalyst
gallium nitride
nitrogen dioxide gas sensor
laser micromachining
sapphire
AlGaN/GaN heterostructures
high-electron mobility devices
p-GaN gate HEMT
normally off
low-resistance SiC substrate
temperature
high electron-mobility transistor (HEMT)
equivalent-circuit modeling
microwave frequency
scattering-parameter measurements
GaN
MIS-HEMTs
fabrication
threshold voltage stability
supercritical technology
GaN power HEMTs
breakdown voltage
current collapse
compensation ratio
auto-compensation
carbon doping
HVPE
AlN
high-temperature
buffer layer
nitridation
high-electron mobility transistor
heterogeneous integration
SOI
QST
crystal growth
cubic and hexagonal structure
blue and yellow luminescence
electron lifetime
wafer dicing
stealth dicing
laser thermal separation
dry processing
laser processing
wide bandgap semiconductor
photovoltaic module
digital signal processor
synchronous buck converter
polar
semi-polar
non-polar
magnetron sputtering
HTA
GaN-HEMT mesa structures
2DEG
X-ray sensor
X-ray imaging
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910576886103321
Verzellesi Giovanni  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui