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Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu
| Nanoelectronic Materials, Devices and Modeling / Qiliang Li, Hao Zhu |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN |
9783039212262
3039212265 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
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Verzellesi Giovanni
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||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||