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Nanowire Field-Effect Transistor (FET)
Nanowire Field-Effect Transistor (FET)
Autore García-Loureiro Antonio
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (96 p.)
Soggetto topico History of engineering & technology
Soggetto non controllato random dopant
drift-diffusion
variability
device simulation
nanodevice
screening
Coulomb interaction
III-V
TASE
MOSFETs
Integration
nanowire field-effect transistors
silicon nanomaterials
charge transport
one-dimensional multi-subband scattering models
Kubo–Greenwood formalism
schrödinger-poisson solvers
DC and AC characteristic fluctuations
gate-all-around
nanowire
work function fluctuation
aspect ratio of channel cross-section
timing fluctuation
noise margin fluctuation
power fluctuation
CMOS circuit
statistical device simulation
variability effects
Monte Carlo
Schrödinger based quantum corrections
quantum modeling
nonequilibrium Green’s function
nanowire transistor
electron–phonon interaction
phonon–phonon interaction
self-consistent Born approximation
lowest order approximation
Padé approximants
Richardson extrapolation
ZnO
field effect transistor
conduction mechanism
metal gate
material properties
fabrication
modelling
nanojunction
constriction
quantum electron transport
quantum confinement
dimensionality reduction
stochastic Schrödinger equations
geometric correlations
silicon nanowires
nano-transistors
quantum transport
hot electrons
self-cooling
nano-cooling
thermoelectricity
heat equation
non-equilibrium Green functions
power dissipation
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Nanowire Field-Effect Transistor
Record Nr. UNINA-9910557553303321
García-Loureiro Antonio  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Solution Synthesis, Processing, and Applications of Semiconducting Nanomaterials
Solution Synthesis, Processing, and Applications of Semiconducting Nanomaterials
Autore Hsu Julia W. P
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Descrizione fisica 1 electronic resource (156 p.)
Soggetto topico Research & information: general
Soggetto non controllato copper
copper nitride
photo sintering
ink
paste
printed electronics
post-processing
Cu2ZnSnS4 solar cell
ball milling
nano-ink
annealing
tin monoxide
nanoshell
ammonia sensor
solution method
CMZTSSe films
sol-gel
electrical properties
optical properties
selenization treatment
solar cells
oxygen reduction reaction
nanocatalysts
carbon nanotube
wet-chemical reduction method
Au-clusters
mass activity
resistance switching
high/low resistance
oxygen defect
conduction mechanism
BNSL
superlattice
self-assembly
colloidal nanocrystal
binary nanocrystal superlattice
electrospinning
CuCrO2
hollow nanotube
Al2O3 template
one-dimensional structures
IGZO composition
solution combustion synthesis
transparent amorphous semiconductor oxides
low voltage operation
Mg doped CuCrO2
hole transport layer
organic solar cells
perovskite solar cells
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557463703321
Hsu Julia W. P  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui