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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications
| Memristors for Neuromorphic Circuits and Artificial Intelligence Applications |
| Autore | Suñé Jordi |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (244 p.) |
| Soggetto non controllato |
graphene oxide
artificial neural network simulation neural networks STDP neuromorphics spiking neural network artificial intelligence hierarchical temporal memory synaptic weight optimization transistor-like devices multiscale modeling memristor crossbar spike-timing-dependent plasticity memristor-CMOS hybrid circuit pavlov wire resistance AI neocortex synapse character recognition resistive switching electronic synapses defect-tolerant spatial pooling emulator compact model deep learning networks artificial synapse circuit design memristors neuromorphic engineering memristive devices OxRAM neural network hardware sensory and hippocampal responses neuromorphic hardware boost-factor adjustment RRAM variability Flash memories neuromorphic reinforcement learning laser memristor hardware-based deep learning ICs temporal pooling self-organization maps crossbar array pattern recognition strongly correlated oxides vertical RRAM autocovariance neuromorphic computing synaptic device cortical neurons time series modeling spiking neural networks neuromorphic systems synaptic plasticity |
| ISBN | 3-03928-577-7 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910404090703321 |
Suñé Jordi
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| MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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