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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (96 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
random dopant
drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Organic Conductors
| Organic Conductors |
| Autore | Naito Toshio |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (418 p.) |
| Soggetto topico |
Technology: general issues
Chemical engineering |
| Soggetto non controllato |
organic π-radical
molecular conductor phthalocyanine three-dimensional network three-dimensional electronic system organic conductors bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) bis(ethylenediseleno)tetrathiafulvalene (BEST) bis(ethylenedithio)tetraselenafulvalene (BETS) electrical resistivity magnetic susceptibility X-ray analysis charge-ordered state quantum chemical calculations Madelung energy magnetic property reversible transformation spin ladder nodal line semimetal single-component molecular conductor conductivity DOS tight-binding model interacting electrons in one dimension electronic and lattice instabilities renormalization group method X-ray diffraction single crystal electron density molecular orbital single-component molecular conductors extended-TTF dithiolate ligands gold dithiolate complexes (BETS)2Fe1−xGaxCl4 π-d interaction NMR charge glass heat capacity electric current electric voltage Boson peak chirality tetrathiafulvalene crystal structures band structure calculations hydrogen bonding charge-transfer salts (TMTTF)2X deuteration anions charge transport tunnel junction MOCVD quantum well co-doping solar cells (TMTSF)8(I3)5 (TMTSF)5(I3)2 (TMTSF)4(I3)4·THF organic conductor crystal structure high pressure DFT MP2 organic superconductors Beechgard salts Maxwell-Garnett approximation high-Tc pressure effect Dirac electron system resistivity magnetoresistance synchrotron X-ray diffraction band calculation correlated electron materials layered organic conductor unconventional superconductivity vortex dynamics d-wave pairing symmetry superconducting gap structure magnetic field flux-flow resistivity charge-ordered insulator electric double layer transistor organic field-effect transistor π-d system Mott insulator strongly correlated electron system multiferroic dielectric photoconductor organic semiconductors molecular orbitals pyroelectricity temperature modulation molecular ferroelectrics radiative temperature control thermal diffusion model lithium niobate first-principles calculation density-functional theory charge ordering hybrid functional electronic structure nickel-dithiolene complex cycloalkane substituent crystalline organic charge-transfer complexes disordered systems overlap integrals extended Hückel approximation Dirac electrons zero-gap semiconductors merging of Dirac cones |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580206403321 |
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Naito Toshio
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Symmetry and Asymmetry in Quasicrystals or Amorphous Materials
| Symmetry and Asymmetry in Quasicrystals or Amorphous Materials |
| Autore | Barber Enrique Maciá |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (120 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
nucleic acids
aperiodic quasiperiodic fractal order disorder energy structure charge transport Mg-Zn-Gd alloys symmetrical rod phase quasicrystal morphologies and properties quasiperiodic order self-similarity quasiperiodic photonic micro/nanostructures fractal-like photonic micro/nanostructures quasiperiodic or fractal-like plasmonic structures non-periodic systems localization properties electrical transmission lines quasiperiodicity localization tight-binding model Kubo formula low-dimensional systems |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557576603321 |
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Barber Enrique Maciá
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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