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Fundamentals and Recent Advances in Epitaxial Graphene on SiC
Fundamentals and Recent Advances in Epitaxial Graphene on SiC
Autore Yakimova Rositsa
Pubbl/distr/stampa Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Descrizione fisica 1 electronic resource (94 p.)
Soggetto topico Technology: general issues
Soggetto non controllato epitaxial graphene
copper
redox reaction
electrodeposition
voltammetry
chronoamperometry
DFT
silicon carbide
Raman spectroscopy
2D peak line shape
G peak
charge density
strain
atomic layer deposition
high-k insulators
ion implantation
Raman
AFM
XPS
graphene
SiC
3C-SiC on Si
substrate interaction
carrier concentration
mobility
intercalation
buffer layer
surface functionalization
twistronics
twisted bilayer graphene
flat band
epitaxial graphene on SiC
quasi-free-standing graphene
monolayer graphene
high-temperature sublimation
terahertz optical Hall effect
free charge carrier properties
sublimation
electronic properties
material engineering
deposition
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910557896703321
Yakimova Rositsa  
Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Autore Verzellesi Giovanni
Pubbl/distr/stampa Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Descrizione fisica 1 electronic resource (320 p.)
Soggetto topico Technology: general issues
History of engineering & technology
Energy industries & utilities
Soggetto non controllato energy storage system
power conditioning system
silicon carbide
vanadium redox flow batteries
AlGaN/GaN
SiC
high electron mobility transistor
Schottky barrier diode
breakdown field
noise
charge traps
radio frequency
wide-bandgap (WBG)
gallium nitride (GaN)
silicon carbide (SiC)
high electron mobility transistor (HEMT)
metal-oxide-semiconductor field effect transistor (MOSFET)
driving technology
nickel oxide
annealing temperature
crystallite size
optical band gap
electrochromic device
indium oxide thin film
solution method
plasma surface treatment
bias stability
aluminum nitride
Schottky barrier diodes
radio frequency sputtering
X-ray diffraction
X-ray photoelectron spectroscopy
piezoelectric micromachined ultrasonic transducers
ranging
time of flight (TOF)
time to digital converter circuit (TDC)
AlGaN/GaN heterojunction
p-GaN gate
unidirectional operation
rectifying electrode
first-principles
density functional theory
pure β-Ga2O3
Sr-doped β-Ga2O3
p-type doping
band structure
density of states
optical absorption
AlN buffer layer
NH3 growth interruption
strain relaxation
GaN-based LED
low defect density
gate bias modulation
palladium catalyst
gallium nitride
nitrogen dioxide gas sensor
laser micromachining
sapphire
AlGaN/GaN heterostructures
high-electron mobility devices
p-GaN gate HEMT
normally off
low-resistance SiC substrate
temperature
high electron-mobility transistor (HEMT)
equivalent-circuit modeling
microwave frequency
scattering-parameter measurements
GaN
MIS-HEMTs
fabrication
threshold voltage stability
supercritical technology
GaN power HEMTs
breakdown voltage
current collapse
compensation ratio
auto-compensation
carbon doping
HVPE
AlN
high-temperature
buffer layer
nitridation
high-electron mobility transistor
heterogeneous integration
SOI
QST
crystal growth
cubic and hexagonal structure
blue and yellow luminescence
electron lifetime
wafer dicing
stealth dicing
laser thermal separation
dry processing
laser processing
wide bandgap semiconductor
photovoltaic module
digital signal processor
synchronous buck converter
polar
semi-polar
non-polar
magnetron sputtering
HTA
GaN-HEMT mesa structures
2DEG
X-ray sensor
X-ray imaging
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Altri titoli varianti Wide Bandgap Based Devices
Record Nr. UNINA-9910576886103321
Verzellesi Giovanni  
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui
Wide Bandgap Semiconductor Based Micro/Nano Devices
Wide Bandgap Semiconductor Based Micro/Nano Devices
Autore Seo Jung-Hun
Pubbl/distr/stampa MDPI - Multidisciplinary Digital Publishing Institute, 2019
Descrizione fisica 1 electronic resource (138 p.)
Soggetto non controllato ohmic contact
MESFET
optical band gap
wide-bandgap semiconductor
annealing temperature
junction termination extension (JTE)
channel length modulation
silicon carbide (SiC)
amorphous InGaZnO (a-IGZO)
light output power
GaN
electrochromism
large signal performance
passivation layer
4H-SiC
positive gate bias stress (PGBS)
asymmetric power combining
ultrahigh upper gate height
high electron mobility transistors
space application
gallium nitride (GaN)
phase balance
edge termination
distributed Bragg reflector
cathode field plate (CFP)
ammonothermal GaN
anode field plate (AFP)
W band
GaN high electron mobility transistor (HEMT)
1T DRAM
growth of GaN
tungsten trioxide film
thin-film transistor (TFT)
micron-sized patterned sapphire substrate
power added efficiency
T-anode
analytical model
AlGaN/GaN
harsh environment
high-temperature operation
amplitude balance
buffer layer
characteristic length
Ku-band
DIBL effect
I-V kink effect
flip-chip light-emitting diodes
high electron mobility transistors (HEMTs)
power amplifier
sidewall GaN
external quantum efficiency
breakdown voltage (BV)
threshold voltage (Vth) stability
regrown contact
AlGaN/GaN HEMT
TCAD
high electron mobility transistor (HEMT)
ISBN 3-03897-843-4
Formato Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione eng
Record Nr. UNINA-9910346846903321
Seo Jung-Hun  
MDPI - Multidisciplinary Digital Publishing Institute, 2019
Materiale a stampa
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilità qui