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Selected Papers from 2018 IEEE International Conference on High Voltage Engineering (ICHVE 2018)
| Selected Papers from 2018 IEEE International Conference on High Voltage Engineering (ICHVE 2018) |
| Autore | Fofana Issouf |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (264 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
transformer oil
multi frequency ultrasonic water content back propagation neural network genetic algorithm air capacitive sensors power system transients high-voltage measurements high-voltage monitoring mineral oil different particles accumulation behavior breakdown voltage DC voltage vacuum circuit breaker multi-break voltage distribution FEM stray capacitance grading capacitor partial discharge needle-plate model statistical rule discharge stage space charge silicone rubber degradation breakdown contact angle surface roughness FTIR ATH electrical tree XLPE polycyclic compound DC-impulse voltage temperature trap distribution creeping discharge AC voltage point-plane atmospheric gases flashover voltage polytetrafluoroethylene (PTFE) epoxy resin high voltage direct current polymeric insulation space charges nonlinear electric conductivity cable termination electric field high-voltage test stress relief cone grounding system substation lightning transmission system surge arrester performance bundle electric field corona HVDC transmission lines optimization radio interference electromagnetic transients nonuniform transmission line numerical Laplace transform time-dependent elements transmission line modeling nanofluids nanoparticles breakdown strength transformer oils permittivity conductivity combustion particle electric field distortion multi physical field finite element method particle movement characteristic insulator design dry band pollution offshore export cables inter-array cables damped AC voltage (DAC), after-laying cable testing on-site diagnosis condition assessment partial discharges and dissipation factor |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Selected Papers from 2018 IEEE International Conference on High Voltage Engineering |
| Record Nr. | UNINA-9910557153503321 |
Fofana Issouf
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (320 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology Energy industries & utilities |
| Soggetto non controllato |
energy storage system
power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
|
Verzellesi Giovanni
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||