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Selected Papers from 2018 IEEE International Conference on High Voltage Engineering (ICHVE 2018)
| Selected Papers from 2018 IEEE International Conference on High Voltage Engineering (ICHVE 2018) |
| Autore | Fofana Issouf |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (264 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
AC voltage
accumulation behavior air capacitive sensors and dissipation factor ATH atmospheric gases back propagation neural network breakdown breakdown strength breakdown voltage bundle electric field cable termination combustion particle condition assessment conductivity contact angle corona creeping discharge damped AC voltage (DAC), after-laying cable testing DC voltage DC-impulse voltage degradation different particles discharge stage dry band electric field electric field distortion electrical tree electromagnetic transients epoxy resin export cables FEM finite element method flashover voltage FTIR genetic algorithm grading capacitor grounding system high voltage direct current high-voltage measurements high-voltage monitoring high-voltage test HVDC transmission lines insulator design inter-array cables lightning mineral oil multi frequency ultrasonic multi physical field multi-break n/a nanofluids nanoparticles needle-plate model nonlinear electric conductivity nonuniform transmission line numerical Laplace transform offshore on-site diagnosis optimization partial discharge partial discharges particle movement characteristic permittivity point-plane pollution polycyclic compound polymeric insulation polytetrafluoroethylene (PTFE) power system transients radio interference silicone rubber space charge space charges statistical rule stray capacitance stress relief cone substation surface roughness surge arrester performance temperature time-dependent elements transformer oil transformer oils transmission line modeling transmission system trap distribution vacuum circuit breaker voltage distribution water content XLPE |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Selected Papers from 2018 IEEE International Conference on High Voltage Engineering |
| Record Nr. | UNINA-9910557153503321 |
Fofana Issouf
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
| Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II |
| Autore | Verzellesi Giovanni |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (320 p.) |
| Soggetto topico |
Energy industries and utilities
History of engineering and technology Technology: general issues |
| Soggetto non controllato |
2DEG
AlGaN/GaN AlGaN/GaN heterojunction AlGaN/GaN heterostructures AlN AlN buffer layer aluminum nitride annealing temperature auto-compensation band structure bias stability blue and yellow luminescence breakdown field breakdown voltage buffer layer carbon doping charge traps compensation ratio crystal growth crystallite size cubic and hexagonal structure current collapse density functional theory density of states digital signal processor driving technology dry processing electrochromic device electron lifetime energy storage system equivalent-circuit modeling fabrication first-principles gallium nitride gallium nitride (GaN) GaN GaN power HEMTs GaN-based LED GaN-HEMT mesa structures gate bias modulation heterogeneous integration high electron mobility transistor high electron mobility transistor (HEMT) high electron-mobility transistor (HEMT) high-electron mobility devices high-electron mobility transistor high-temperature HTA HVPE indium oxide thin film laser micromachining laser processing laser thermal separation low defect density low-resistance SiC substrate magnetron sputtering metal-oxide-semiconductor field effect transistor (MOSFET) microwave frequency MIS-HEMTs n/a NH3 growth interruption nickel oxide nitridation nitrogen dioxide gas sensor noise non-polar normally off optical absorption optical band gap p-GaN gate p-GaN gate HEMT p-type doping palladium catalyst photovoltaic module piezoelectric micromachined ultrasonic transducers plasma surface treatment polar power conditioning system pure β-Ga2O3 QST radio frequency radio frequency sputtering ranging rectifying electrode sapphire scattering-parameter measurements Schottky barrier diode Schottky barrier diodes semi-polar SiC silicon carbide silicon carbide (SiC) SOI solution method Sr-doped β-Ga2O3 stealth dicing strain relaxation supercritical technology synchronous buck converter temperature threshold voltage stability time of flight (TOF) time to digital converter circuit (TDC) unidirectional operation vanadium redox flow batteries wafer dicing wide bandgap semiconductor wide-bandgap (WBG) X-ray diffraction X-ray imaging X-ray photoelectron spectroscopy X-ray sensor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Wide Bandgap Based Devices |
| Record Nr. | UNINA-9910576886103321 |
|
Verzellesi Giovanni
|
||
| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||