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Advances in Chemical Crystallography: A Themed Issue Honoring Professor Alexandra M. Z. Slawin on the Occasion of Her 60th Birthday
| Advances in Chemical Crystallography: A Themed Issue Honoring Professor Alexandra M. Z. Slawin on the Occasion of Her 60th Birthday |
| Autore | Harrison William T. A |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (214 p.) |
| Soggetto topico |
Research & information: general
Chemistry Organic chemistry |
| Soggetto non controllato |
molecular magnetism
supramolecular chemistry heterometallic clusters magnetometry EPR spectroscopy N-Substituted Benzamides Woollins’ reagent selenation reagent reduction reagent single crystal X-ray structures DFT 3d metal complex benchmark hydricity 2D Cu-MOF square grid structure Click reaction Knoevenagel reaction green chemistry titanium(IV) oxo-clusters band gap modification multinuclear NMR ESI-MS studies photoluminescence perophoramidine natural product Claisen rearrangement indoloquinoline intramolecular cyclization X-ray structure isothiourea ammonium enolate aryloxide quinone methide ester functionalization 1,6-conjugate addition layered perovskite bandgap tuning azetidinium Ruddlesden–Popper structure-property relations amide groups isomers late-transition metals P-ligands phenols secondary interactions single crystal X-ray crystallography MOF calcium MOF electrochemistry scXRD VTXRD bioMOF bond activation low oxidation state complexes magnesium metallacycles ring system X-ray crystallography peri-substitution arsenic organophosphorus pnictine PDS PELDOR DEER nitroxide spin label Comparative DEER Analyzer mtsslSuite MMM oxazoline Wittig rearrangement thiophene thieno[2,3-c]pyrrolone |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Advances in Chemical Crystallography |
| Record Nr. | UNINA-9910576882403321 |
Harrison William T. A
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling
| Nanoelectronic Materials, Devices and Modeling |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN | 3-03921-226-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
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Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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