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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Preparation and Properties of 2D Materials
| Preparation and Properties of 2D Materials |
| Autore | Cho Byungjin |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (142 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
α-MoO3
carbon nitride g-C3N4 molybdenum trioxide nanoplates synthesis few-layer MoS2 magnetron sputtering magnetron sputtering power raman spectroscopy disorder V2Se9 atomic crystal mechanical exfoliation scanning Kelvin probe microscopy MoS2 black phosphorus 2D/2D heterojunction junction FET tunneling diode tunneling FET band-to-band tunneling (BTBT) natural molybdenite MoS2 nanosheet SiO2 liquid exfoliation photoelectric properties uniaxial strain flexible substrate film-substrate interaction photoluminescence Raman spectroscopy molybdenum disulfide bilayer-stacked structure WS2 lubricant additives tribological properties interfacial layer contact resistance bias stress stability saturable absorbers Langmuir-Blodgett technique Q-switched laser chemical vapor deposition P2O5 p-type conduction P-doped MoS2 transition metal dichalcogenides two-dimensional materials ferroelectrics 2D heterostructure WSe2 NbSe2 Nb2O5 interlayer synapse device neuromorphic system |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557292403321 |
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Cho Byungjin
|
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||