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Electronic Nanodevices
| Electronic Nanodevices |
| Autore | Bartolomeo Antonio |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (240 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
concentrator systems
GaInP/GaInAs/Ge multi-junction photovoltaics solar cells space triple-junction FeFET ferroelectric nonvolatile semiconductor memory SBT nanoantennas optics optoelectronic devices photovoltaic technology rectennas resistive memories thermal model heat equation thermal conductivity circuit simulation compact modeling resistive switching nanodevices power conversion efficiency MXenes electrodes additives HTL/ETL design of experiments GFET graphene high-frequency RF devices tolerance analysis molybdenum oxides green synthesis biological chelator additional capacity anodes lithium-ion batteries carbon nanotube junctionless tunnel field effect transistors chemical doping electrostatic doping NEGF simulation band-to-band tunneling switching performance nanoscale phosphorene black phosphorus nanoribbon edge contact contact resistance quantum transport NEGF metallization broadening zigzag carbon nanotube armchair-edge graphene nanoribbon quantum simulation sub-10 nm phototransistors photosensitivity subthreshold swing GaN HEMTs scaling electron mobility scattering polarization charge 2D materials rhenium selenides ReSe2 field-effect transistor pressure negative photoconductivity |
| ISBN | 3-0365-5022-4 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910619469603321 |
Bartolomeo Antonio
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| MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Nanoelectronic Materials, Devices and Modeling
| Nanoelectronic Materials, Devices and Modeling |
| Autore | Li Qiliang |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (242 p.) |
| Soggetto non controllato |
quantum mechanical
neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green's function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator-metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form |
| ISBN | 3-03921-226-5 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346664303321 |
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Li Qiliang
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Silicon Nanodevices
| Silicon Nanodevices |
| Autore | Radamson Henry |
| Pubbl/distr/stampa | Basel, : MDPI Books, 2022 |
| Descrizione fisica | 1 electronic resource (238 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
silicon
yolk−shell structure anode lithium-ion batteries in-plane nanowire site-controlled epitaxial growth germanium nanowire-based quantum devices HfO2/Si0.7Ge0.3 gate stack ozone oxidation Si-cap interface state density passivation GOI photodetectors dark current responsivity prussian blue nanoparticles organotrialkoxysilane silica beads arsenite arsenate water decontamination vertical gate-all-around (vGAA) digital etch quasi-atomic-layer etching (q-ALE) selective wet etching HNO3 concentration doping effect vertical Gate-all-around (vGAA) p+-Ge0.8Si0.2/Ge stack dual-selective wet etching atomic layer etching (ALE) stacked SiGe/Si epitaxial grown Fin etching FinFET short-term potentiation (STP) long-term potentiation (LTP) charge-trap synaptic transistor band-to-band tunneling pattern recognition neural network neuromorphic system Si-MOS quantum dot spin qubits quantum computing GeSn CVD lasers detectors transistors III-V on Si heteroepitaxy threading dislocation densities (TDDs) anti-phase boundaries (APBs) selective epitaxial growth (SEG) |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910595076903321 |
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Radamson Henry
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| Basel, : MDPI Books, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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