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Terahertz Technology and Its Applications
| Terahertz Technology and Its Applications |
| Autore | Peña Victor Pacheco |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (162 p.) |
| Soggetto topico | Research and information: general |
| Soggetto non controllato |
adaptive range gates
anti-series bias cascaded doubler catadioptric horn-like lens CMOS CMOS process conversion loss correction electric field flip-chip foreign materials high output power hollowing honeycomb sandwiches hybrid integrated circuit image distortion InGaAs light field imaging molecular beam epitaxy n/a open stone relics optical delay line optical encoder oscillator periodic waveguides photoconductive antenna preservation of cultural heritage quadrupler radar cross-section rectangular inset-feed patch antenna reflection phases resolving power resonances rubber Schottky diode Schottky Diode Detectors Schottky varactor signal-to-noise ratio silica dispersion sub-harmonic mixer synthetic aperture imaging terahertz imaging terahertz metrology Terahertz radar terahertz spectra terahertz spectroscopy terahertz wave generation terahertz waves THz THz detector THz-TDS time-domain spectroscopy time-of-flight topological properties vulcanization W band weathered wire bonding ZBD modeling |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557366803321 |
Peña Victor Pacheco
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo
| Wide Bandgap Semiconductor Based Micro/Nano Devices / Jung-Hun Seo |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN |
9783038978435
3038978434 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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