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Terahertz Technology and Its Applications
| Terahertz Technology and Its Applications |
| Autore | Peña Victor Pacheco |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (162 p.) |
| Soggetto topico | Research & information: general |
| Soggetto non controllato |
W band
Schottky Diode Detectors ZBD modeling wire bonding flip-chip Terahertz radar radar cross-section signal-to-noise ratio adaptive range gates cascaded doubler quadrupler Schottky varactor hybrid integrated circuit terahertz spectroscopy optical delay line correction optical encoder terahertz spectra terahertz metrology bias sub-harmonic mixer anti-series Schottky diode conversion loss terahertz wave generation InGaAs molecular beam epitaxy time-domain spectroscopy photoconductive antenna open stone relics hollowing weathered preservation of cultural heritage THz-TDS rubber vulcanization silica dispersion terahertz imaging light field imaging synthetic aperture imaging image distortion resolving power THz detector rectangular inset-feed patch antenna catadioptric horn-like lens CMOS process resonances periodic waveguides reflection phases topological properties oscillator THz high output power CMOS terahertz waves honeycomb sandwiches foreign materials time-of-flight electric field |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557366803321 |
Peña Victor Pacheco
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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