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Advanced Thin Film Materials for Photovoltaic Applications
| Advanced Thin Film Materials for Photovoltaic Applications |
| Autore | Dharmadasa I. M |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 electronic resource (148 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
electroplating
semiconductors large-area electronics characterisation solar cells perovskite solar cell hole blocking layer solution spin-coating TiO2/SnO2 layer anti-reflection coating potential-induced degradation solar cell plasma enhanced chemical vapor deposition organic solar cells perovskite solar cells encapsulation stability Cu(In,Ga)Se2 mini-module numerical simulation P1 shunt space charge region (SCR) TCAD transistor effect electrodeposition CdTe film two-electrode configuration thin films electroplating temperature photovoltaic CdTe CdS luminescence spectroscopy CdSe CdTe1−xSex photovoltaics review tin monosulfide tin disulfide chemical solution process absorber buffer renewable energy ethlammonium formamidinium microstructure perovskite SnS/SnS2 CdS/CdTe CIGS silicon electroplating of semiconductors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557411203321 |
Dharmadasa I. M
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation / Ajay Kumar Srivastava
| Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation / Ajay Kumar Srivastava |
| Autore | Srivastava, Ajay Kumar |
| Pubbl/distr/stampa | Cham, : Springer, 2019 |
| Descrizione fisica | xvii, 183 p. : ill. ; 24 cm |
| Soggetto topico |
82-XX - Statistical mechanics, structure of matter [MSC 2020]
00A79 (77-XX) - Physics [MSC 2020] 81V35 - Nuclear physics [MSC 2020] |
| Soggetto non controllato |
CERN RD50 collaboration
CMS detector Designing pixel detectors High Luminosity Large Hadron Collider experiments High precision radiation hard detectors LHC Pixel sensors Semiconductor radiation detectors Si pixel detector Surface radiation design TCAD |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0218625 |
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Srivastava, Ajay Kumar
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| Cham, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation / Ajay Kumar Srivastava
| Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation / Ajay Kumar Srivastava |
| Autore | Srivastava, Ajay Kumar |
| Pubbl/distr/stampa | Cham, : Springer, 2019 |
| Descrizione fisica | xvii, 183 p. : ill. ; 24 cm |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
81V35 - Nuclear physics [MSC 2020] 82-XX - Statistical mechanics, structure of matter [MSC 2020] |
| Soggetto non controllato |
CERN RD50 collaboration
CMS detector Designing pixel detectors High Luminosity Large Hadron Collider experiments High precision radiation hard detectors LHC Pixel sensors Semiconductor radiation detectors Si pixel detector Surface radiation design TCAD |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00218625 |
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Srivastava, Ajay Kumar
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| Cham, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||
Wide Bandgap Semiconductor Based Micro/Nano Devices
| Wide Bandgap Semiconductor Based Micro/Nano Devices |
| Autore | Seo Jung-Hun |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (138 p.) |
| Soggetto non controllato |
ohmic contact
MESFET optical band gap wide-bandgap semiconductor annealing temperature junction termination extension (JTE) channel length modulation silicon carbide (SiC) amorphous InGaZnO (a-IGZO) light output power GaN electrochromism large signal performance passivation layer 4H-SiC positive gate bias stress (PGBS) asymmetric power combining ultrahigh upper gate height high electron mobility transistors space application gallium nitride (GaN) phase balance edge termination distributed Bragg reflector cathode field plate (CFP) ammonothermal GaN anode field plate (AFP) W band GaN high electron mobility transistor (HEMT) 1T DRAM growth of GaN tungsten trioxide film thin-film transistor (TFT) micron-sized patterned sapphire substrate power added efficiency T-anode analytical model AlGaN/GaN harsh environment high-temperature operation amplitude balance buffer layer characteristic length Ku-band DIBL effect I-V kink effect flip-chip light-emitting diodes high electron mobility transistors (HEMTs) power amplifier sidewall GaN external quantum efficiency breakdown voltage (BV) threshold voltage (Vth) stability regrown contact AlGaN/GaN HEMT TCAD high electron mobility transistor (HEMT) |
| ISBN | 3-03897-843-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346846903321 |
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Seo Jung-Hun
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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