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Filter Design Solutions for RF systems
| Filter Design Solutions for RF systems |
| Autore | Stornelli Vincenzo |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
| Descrizione fisica | 1 online resource (186 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
active filters
active inductor additive manufacturing analogue-to-digital conversion anti-aliasing filters anti-interference filter ATHOS soft X-ray beamline bandpass filter broadband noise conducted disturbances current mode defected ground structure (DGS) dielectric properties digital light processing filter finFET hairpin resonator Hall probe HBT inductorless internal coupling low-pass filter (LPF) low-pass filters low-voltage microwave dielectric ceramics MMIC offset fluctuation and drift operational amplifier phase noise post annealing power line communication (PLC) quarter wavelength SiGe SIMO filter smart home stepped impedance resonator stepped impedance resonator (SIR) stepped-impedance resonator (SIR) stub-loaded switched-capacitor filters three-axis teslameter total harmonic distortion tunable filters ultra-wideband undulator unity-gain bandwidth universal filter varactor VCII voltage conveyor voltage-controlled oscillator wideband |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557768003321 |
Stornelli Vincenzo
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
| Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang |
| Autore | Wang, Guilei |
| Pubbl/distr/stampa | Singapore, : Springer, 2019 |
| Descrizione fisica | xvi, 115 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
Pattern dependency
RPCVD Selective epitaxy SiGe Source/drain technology Strain Technology nodes |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0219614 |
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Wang, Guilei
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| Singapore, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang
| Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond : Doctoral Thesis accepted by Chinese Academy of Sciences, Beijing, China / Guilei Wang |
| Autore | Wang, Guilei |
| Pubbl/distr/stampa | Singapore, : Springer, 2019 |
| Descrizione fisica | xvi, 115 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
Pattern dependency
RPCVD Selective epitaxy SiGe Source/drain technology Strain Technology nodes |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00219614 |
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Wang, Guilei
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| Singapore, : Springer, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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