Emerging Memory and Computing Devices in the Era of Intelligent Machines |
Autore | Khalili Pedram |
Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2020 |
Descrizione fisica | 1 electronic resource (276 p.) |
Soggetto non controllato |
image classification
bipolar resistive switching characteristics bioelectronic devices self-directed channel (SDC) programmable ramp-down current pulses nanoparticles protein DRAM convolutional neural networks silicon oxide-based memristors electrochemical metallization cell magnetic tunnel junction power gating resistance switching mechanism BCH Fast Fourier Transform nucleic acid biomemory conductive filament resistive random access memory (RRAM) non-von Neumann architecture emerging technologies Galois field variability logic-in-memory charge spreading memristor Hebbian training crossbar quantum point contact SONOS bionanohybrid material ECG neuromorphic computing CUDA low-latency iBM Oxygen-related trap nonvolatile memory phase change memory floating gate non-von neumann architecture 3D-stacked STT-MRAM solution-based dielectric GPU Internet of things configurable logic-in-memory architecture memory wall biologic gate synaptic weight guide training ion conduction perpendicular Nano Magnetic Logic (pNML) Weibull distribution real-time system in-DRAM cache task placement dynamic voltage scaling MCU (microprogrammed control unit) wire resistance multi-level cell chalcogenide decoder character recognition matrix-vector multiplication hybrid magnetoresistive random access memory blockchain electrochemical metallization (ECM) RISC-V U-shape recessed channel neuromorphic system in-memory computing crossbar array associative processor low-power plasma treatment voltage-controlled magnetic anisotropy flash memory resistive memory analogue computing bioprocessor annealing temperatures data retention flip-flop low-power technique |
ISBN | 3-03928-503-3 |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910404088103321 |
Khalili Pedram | ||
MDPI - Multidisciplinary Digital Publishing Institute, 2020 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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High-Density Solid-State Memory Devices and Technologies |
Autore | Monzio Compagnoni Christian |
Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
Descrizione fisica | 1 electronic resource (210 p.) |
Soggetto topico |
Technology: general issues
History of engineering & technology |
Soggetto non controllato |
resistive switching memory
in-memory computing crosspoint array artificial intelligence deep learning dielectric RTN TAT Wiener-Khinchin transient analysis phonon surface roughness spectral index power spectrum program suspend 3D NAND Flash Solid State Drives MOSFET low-frequency noise random telegraph noise evaluation method array test pattern STT-MRAM spintronics CoFeB composite free layer low power electronics NAND Flash memory endurance reliability oxide trapped charge artificial neural networks neuromorphic computing NOR Flash memory arrays program noise pulse-width modulation 3D NAND floating gate cell charge-trap cell CMOS under array bumpless TSV WOW COW BBCube bandwidth yield power consumption thermal management |
Formato | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione | eng |
Record Nr. | UNINA-9910566470403321 |
Monzio Compagnoni Christian | ||
Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
Materiale a stampa | ||
Lo trovi qui: Univ. Federico II | ||
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