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III–V Compound Semiconductors and Devices : An Introduction to Fundamentals / Keh Yung Cheng
| III–V Compound Semiconductors and Devices : An Introduction to Fundamentals / Keh Yung Cheng |
| Autore | Cheng, Keh-Yung N. |
| Pubbl/distr/stampa | Cham, : Springer, 2020 |
| Descrizione fisica | xv, 537 p. : ill. ; 24 cm |
| Soggetto topico |
82-XX - Statistical mechanics, structure of matter [MSC 2020]
78-XX - Optics, electromagnetic theory [MSC 2020] 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
Compound Semiconductor Materials
Device Physics of Heterostructure Lasers Heterostructure Band Diagrams High-electron Mobility Transistor Basics High-speed devices Light-Emitting Transistors Liquid Phase Epitaxy MOSFETs Molecular Beam Epitaxy Optical Properties of Dielectric Medium Photonic Devices Strained Layer Structures Superlattices and Minibands Textbook Compound Semiconductors Three-terminal Devices Transistor Lasers Two-terminal Devices Vapor Phase Epitaxy |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0228703 |
Cheng, Keh-Yung N.
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| Cham, : Springer, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||
III–V Compound Semiconductors and Devices : An Introduction to Fundamentals / Keh Yung Cheng
| III–V Compound Semiconductors and Devices : An Introduction to Fundamentals / Keh Yung Cheng |
| Autore | Cheng, Keh-Yung N. |
| Pubbl/distr/stampa | Cham, : Springer, 2020 |
| Descrizione fisica | xv, 537 p. : ill. ; 24 cm |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
78-XX - Optics, electromagnetic theory [MSC 2020] 82-XX - Statistical mechanics, structure of matter [MSC 2020] |
| Soggetto non controllato |
Compound Semiconductor Materials
Compound semiconductors Device Physics of Heterostructure Lasers Heterostructure Band Diagrams High-electron Mobility Transistor Basics High-speed devices Light-Emitting Transistors Liquid Phase Epitaxy MOSFETs Molecular Beam Epitaxy Optical Properties of Dielectric Medium Photonic Devices Strained Layer Structures Superlattices and Minibands Three-terminal Devices Transistor Lasers Two-terminal Devices Vapor Phase Epitaxy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00228703 |
|
Cheng, Keh-Yung N.
|
||
| Cham, : Springer, 2020 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||
Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (96 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
aspect ratio of channel cross-section
charge transport CMOS circuit conduction mechanism constriction Coulomb interaction DC and AC characteristic fluctuations device simulation dimensionality reduction drift-diffusion electron-phonon interaction fabrication field effect transistor gate-all-around geometric correlations heat equation hot electrons III-V Integration Kubo-Greenwood formalism lowest order approximation material properties metal gate modelling Monte Carlo MOSFETs nano-cooling nano-transistors nanodevice nanojunction nanowire nanowire field-effect transistors nanowire transistor noise margin fluctuation non-equilibrium Green functions nonequilibrium Green's function one-dimensional multi-subband scattering models Padé approximants phonon-phonon interaction power dissipation power fluctuation quantum confinement quantum electron transport quantum modeling quantum transport random dopant Richardson extrapolation Schrödinger based quantum corrections schrödinger-poisson solvers screening self-consistent Born approximation self-cooling silicon nanomaterials silicon nanowires statistical device simulation stochastic Schrödinger equations TASE thermoelectricity timing fluctuation variability variability effects work function fluctuation ZnO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
|
García-Loureiro Antonio
|
||
| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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