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Design and Control of Power Converters 2020
| Design and Control of Power Converters 2020 |
| Autore | de Azpeitia Manuel Arias Pérez |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (188 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
soft-switching
Superjunction MOSFET LLC resonant converter zero voltage switching COSS hysteresis COSS intrinsic energy losses SiC devices antiparallel diode dual active bridge power electronic transformer high-frequency transformer Artificial Neural Networks (ANN) fault diagnosis Fast Fourier Transform (FFT) Multilevel Inverter (MLI) LabVIEW magnetics modeling variable inductor hysteresis eddy currents saturable core AC/AC conversion decoupling control modulation DC–DC converter phase shift PWM ZVS inrush current MOSFET telecom server modular multilevel converter (MMC) total harmonic distortion (THD) universal mathematical model (UMM) switching state nearest level modulation (NLM) DC-DC converter IGBT averaged model electrothermal model SPICE power electronics converter control power factor correction total harmonic distortion flyback solid-state lighting |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557326903321 |
de Azpeitia Manuel Arias Pérez
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce
| Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce |
| Autore | Pampillón Arce, María Á. |
| Pubbl/distr/stampa | Cham, : Springer, 2017 |
| Descrizione fisica | xxiii, 164 p. : ill. ; 24 cm |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74K35 - Thin films [MSC 2020] 74A50 - Structured surfaces and interfaces, coexistent phases [MSC 2020] |
| Soggetto non controllato |
Gadolinium Oxide
Gadolinium Scandate High Permittivity Dielectrics High Pressure Sputtering InP Substrates MIS Devices MOSFET Plasma Oxidation Scandium Oxide Scavenging Effect |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0187568 |
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Pampillón Arce, María Á.
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| Cham, : Springer, 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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High-Density Solid-State Memory Devices and Technologies
| High-Density Solid-State Memory Devices and Technologies |
| Autore | Monzio Compagnoni Christian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (210 p.) |
| Soggetto topico |
Technology: general issues
History of engineering & technology |
| Soggetto non controllato |
resistive switching memory
in-memory computing crosspoint array artificial intelligence deep learning dielectric RTN TAT Wiener-Khinchin transient analysis phonon surface roughness spectral index power spectrum program suspend 3D NAND Flash Solid State Drives MOSFET low-frequency noise random telegraph noise evaluation method array test pattern STT-MRAM spintronics CoFeB composite free layer low power electronics NAND Flash memory endurance reliability oxide trapped charge artificial neural networks neuromorphic computing NOR Flash memory arrays program noise pulse-width modulation 3D NAND floating gate cell charge-trap cell CMOS under array bumpless TSV WOW COW BBCube bandwidth yield power consumption thermal management |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566470403321 |
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Monzio Compagnoni Christian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors
| Miniaturized Transistors |
| Autore | Grasser Tibor |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN | 3-03921-011-4 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Grasser Tibor
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 electronic resource (352 p.) |
| Soggetto topico |
Research & information: general
Mathematics & science |
| Soggetto non controllato |
FinFETs
CMOS device processing integrated circuits silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) solid state circuit breaker (SSCB) prototype circuit design GaN HEMT high gate multi-recessed buffer power density power-added efficiency 4H-SiC MESFET IMRD structure power added efficiency 1200 V SiC MOSFET body diode surge reliability silvaco simulation floating gate transistor control gate CMOS device active noise control vacuum channel mean free path vertical air-channel diode vertical transistor field emission particle trajectory model F-N plot space-charge-limited currents 4H-SiC MESFET simulation power added efficiency (PAE) new device three-input transistor T-channel compact circuit style CMOS compatible technology avalanche photodiode SPICE model bandwidth high responsivity silicon photodiode AlGaN/GaN HEMTs thermal simulation transient channel temperature pulse width gate structures band-to-band tunnelling (BTBT) tunnelling field-effect transistor (TFET) germanium-around-source gate-all-around TFET (GAS GAA TFET) average subthreshold swing direct source-to-drain tunneling transport effective mass confinement effective mass multi-subband ensemble Monte Carlo non-equilibrium Green's function DGSOI FinFET core-insulator gate-all-around field effect transistor GAA nanowire one-transistor dynamic random-access memory (1T-DRAM) polysilicon grain boundary electron trapping flexible transistors polymers metal oxides nanocomposites dielectrics active layers nanotransistor quantum transport Landauer-Büttiker formalism R-matrix method nanoscale mosfet quantum current surface transfer doping 2D hole gas (2DHG) diamond MoO3 V2O5 MOSFET reliability random telegraph noise oxide defects SiO2 split-gate trench power MOSFET multiple epitaxial layers specific on-resistance device reliability nanoscale transistor bias temperature instabilities (BTI) defects single-defect spectroscopy non-radiative multiphonon (NMP) model time-dependent defect spectroscopy |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin
| Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin |
| Autore | Shin, Changhwan |
| Pubbl/distr/stampa | Dordrecht, : Springer, 2016 |
| Descrizione fisica | vii, 140 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
CMOS Device Designs
Integrated circuits Line Edge Roughness MOSFET Process-Induced Random Variation Random Dopant Fluctuation Static Random Access Memory Variation-Robust CMOS Work-function Variation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0177812 |
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Shin, Changhwan
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| Dordrecht, : Springer, 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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