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Design and Control of Power Converters 2020
| Design and Control of Power Converters 2020 |
| Autore | de Azpeitia Manuel Arias Pérez |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (188 p.) |
| Soggetto topico | Technology: general issues |
| Soggetto non controllato |
AC/AC conversion
antiparallel diode Artificial Neural Networks (ANN) averaged model converter control COSS hysteresis COSS intrinsic energy losses DC-DC converter decoupling control dual active bridge eddy currents electrothermal model Fast Fourier Transform (FFT) fault diagnosis flyback high-frequency transformer hysteresis IGBT inrush current LabVIEW LLC resonant converter magnetics modeling modular multilevel converter (MMC) modulation MOSFET Multilevel Inverter (MLI) nearest level modulation (NLM) phase shift PWM power electronic transformer power electronics power factor correction saturable core SiC devices soft-switching solid-state lighting SPICE Superjunction MOSFET switching state telecom server total harmonic distortion total harmonic distortion (THD) universal mathematical model (UMM) variable inductor zero voltage switching ZVS |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910557326903321 |
de Azpeitia Manuel Arias Pérez
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce
| Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce |
| Autore | Pampillón Arce, María Á. |
| Pubbl/distr/stampa | Cham, : Springer, 2017 |
| Descrizione fisica | xxiii, 164 p. : ill. ; 24 cm |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74K35 - Thin films [MSC 2020] 74A50 - Structured surfaces and interfaces, coexistent phases [MSC 2020] |
| Soggetto non controllato |
Gadolinium Oxide
Gadolinium Scandate High Permittivity Dielectrics High Pressure Sputtering InP Substrates MIS Devices MOSFET Plasma Oxidation Scandium Oxide Scavenging Effect |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0187568 |
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Pampillón Arce, María Á.
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| Cham, : Springer, 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce
| Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets : Doctoral Thesis accepted by The Complutense University of Madrid, Spain / María Ángela Pampillón Arce |
| Autore | Pampillón Arce, María Á. |
| Pubbl/distr/stampa | Cham, : Springer, 2017 |
| Descrizione fisica | xxiii, 164 p. : ill. ; 24 cm |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74A50 - Structured surfaces and interfaces, coexistent phases [MSC 2020] 74K35 - Thin films [MSC 2020] |
| Soggetto non controllato |
Gadolinium Oxide
Gadolinium Scandate High Permittivity Dielectrics High Pressure Sputtering InP Substrates MIS Devices MOSFET Plasma Oxidation Scandium Oxide Scavenging Effect |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00187568 |
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Pampillón Arce, María Á.
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| Cham, : Springer, 2017 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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High-Density Solid-State Memory Devices and Technologies
| High-Density Solid-State Memory Devices and Technologies |
| Autore | Monzio Compagnoni Christian |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (210 p.) |
| Soggetto topico |
History of engineering & technology
Technology: general issues |
| Soggetto non controllato |
3D NAND
3D NAND Flash array test pattern artificial intelligence artificial neural networks bandwidth BBCube bumpless charge-trap cell CMOS under array CoFeB composite free layer COW crosspoint array deep learning dielectric endurance evaluation method floating gate cell in-memory computing low power electronics low-frequency noise MOSFET n/a NAND Flash memory neuromorphic computing NOR Flash memory arrays oxide trapped charge phonon power consumption power spectrum program noise program suspend pulse-width modulation random telegraph noise reliability resistive switching memory RTN Solid State Drives spectral index spintronics STT-MRAM surface roughness TAT thermal management transient analysis TSV Wiener-Khinchin WOW yield |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910566470403321 |
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Monzio Compagnoni Christian
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors / Lado Filipovic, Tibor Grasser
| Miniaturized Transistors / Lado Filipovic, Tibor Grasser |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | MDPI - Multidisciplinary Digital Publishing Institute, 2019 |
| Descrizione fisica | 1 electronic resource (202 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
MOSFET
total ionizing dose (TID) low power consumption process simulation two-dimensional material negative-capacitance power consumption technology computer aided design (TCAD) thin-film transistors (TFTs) band-to-band tunneling (BTBT) nanowires inversion channel metal oxide semiconductor field effect transistor (MOSFET) spike-timing-dependent plasticity (STDP) field effect transistor segregation systematic variations Sentaurus TCAD indium selenide nanosheets technology computer-aided design (TCAD) high-? dielectric subthreshold bias range statistical variations fin field effect transistor (FinFET) compact models non-equilibrium Green's function etching simulation highly miniaturized transistor structure compact model silicon nanowire surface potential Silicon-Germanium source/drain (SiGe S/D) nanowire plasma-aided molecular beam epitaxy (MBE) phonon scattering mobility silicon-on-insulator drain engineered device simulation variability semi-floating gate synaptic transistor neuromorphic system theoretical model CMOS ferroelectrics tunnel field-effect transistor (TFET) SiGe metal gate granularity buried channel ON-state bulk NMOS devices ambipolar piezoelectrics tunnel field effect transistor (TFET) FinFETs polarization field-effect transistor line edge roughness random discrete dopants radiation hardened by design (RHBD) low energy flux calculation doping incorporation low voltage topography simulation MOS devices low-frequency noise high-k layout level set process variations subthreshold metal gate stack electrostatic discharge (ESD) |
| ISBN |
9783039210114
3039210114 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910346680003321 |
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Filipovic Lado
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| MDPI - Multidisciplinary Digital Publishing Institute, 2019 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Miniaturized Transistors, Volume II
| Miniaturized Transistors, Volume II |
| Autore | Filipovic Lado |
| Pubbl/distr/stampa | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica | 1 online resource (352 p.) |
| Soggetto topico |
Mathematics & science
Research & information: general |
| Soggetto non controllato |
1200 V SiC MOSFET
2D hole gas (2DHG) 4H-SiC 4H-SiC MESFET active layers active noise control AlGaN/GaN HEMTs avalanche photodiode average subthreshold swing band-to-band tunnelling (BTBT) bandwidth bias temperature instabilities (BTI) body diode circuit design CMOS CMOS compatible technology CMOS device compact circuit style confinement effective mass control gate core-insulator defects device processing device reliability DGSOI diamond dielectrics direct source-to-drain tunneling electron trapping F-N plot field effect transistor field emission FinFET FinFETs flexible transistors floating gate transistor GAA GaN gate structures gate-all-around germanium-around-source gate-all-around TFET (GAS GAA TFET) grain boundary HEMT high gate high responsivity IMRD structure integrated circuits Landauer-Büttiker formalism mean free path MESFET metal oxides MoO3 mosfet MOSFET multi-recessed buffer multi-subband ensemble Monte Carlo multiple epitaxial layers n/a nanocomposites nanoscale nanoscale transistor nanotransistor nanowire new device non-equilibrium Green's function non-radiative multiphonon (NMP) model one-transistor dynamic random-access memory (1T-DRAM) oxide defects particle trajectory model polymers polysilicon power added efficiency power added efficiency (PAE) power density power-added efficiency prototype pulse width quantum current quantum transport R-matrix method random telegraph noise reliability silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) silicon photodiode silvaco simulation simulation single-defect spectroscopy SiO2 solid state circuit breaker (SSCB) space-charge-limited currents specific on-resistance SPICE model split-gate trench power MOSFET surface transfer doping surge reliability T-channel thermal simulation three-input transistor time-dependent defect spectroscopy transient channel temperature transport effective mass tunnelling field-effect transistor (TFET) V2O5 vacuum channel vertical air-channel diode vertical transistor |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Record Nr. | UNINA-9910580205803321 |
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Filipovic Lado
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| Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin
| Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin |
| Autore | Shin, Changhwan |
| Pubbl/distr/stampa | Dordrecht, : Springer, 2016 |
| Descrizione fisica | vii, 140 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
CMOS Device Designs
Integrated circuits Line Edge Roughness MOSFET Process-Induced Random Variation Random Dopant Fluctuation Static Random Access Memory Variation-Robust CMOS Work-function Variation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0177812 |
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Shin, Changhwan
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| Dordrecht, : Springer, 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin
| Variation-Aware Advanced CMOS Devices and SRAM / Changhwan Shin |
| Autore | Shin, Changhwan |
| Pubbl/distr/stampa | Dordrecht, : Springer, 2016 |
| Descrizione fisica | vii, 140 p. : ill. ; 24 cm |
| Soggetto topico | 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
CMOS Device Designs
Integrated circuits Line Edge Roughness MOSFET Process-Induced Random Variation Random Dopant Fluctuation Static Random Access Memory Variation-Robust CMOS Work-function Variation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00177812 |
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Shin, Changhwan
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| Dordrecht, : Springer, 2016 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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