Info
- Utilizzare la checkbox di selezione a fianco di ciascun documento per attivare le funzionalità di stampa, invio email, download nei formati disponibili del (i) record.
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910790325403321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin
| Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / / edited by Alexei N. Nazarov and Jean-Pierre Raskin |
| Pubbl/distr/stampa | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] |
| Descrizione fisica | 1 online resource (199 p.) |
| Disciplina | 621.38152 |
| Altri autori (Persone) |
NazarovA. N (Alexei N.)
RaskinJ.-P <1971-> (Jean-Pierre) |
| Collana | Advanced materials research |
| Soggetto topico |
Semiconductors
Silicon-on-insulator technology Nanoelectromechanical systems Nanotechnology |
| Soggetto non controllato |
Nanoscaled
Semiconductor-on-insulator Sensors Insulator |
| ISBN | 3-03813-615-8 |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Nota di contenuto |
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices; Preface and Committee Members; Table of Contents; I. Technology of Semiconductor-On-Insulator Structures and Devices; ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications; Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures; Diamond - Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing; Hydrogen Gettering within Processed Oxygen-Implanted Silicon; II. Physics of New SOI Devices
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical ModelSemi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels; Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs; High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs; Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures; Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs; Effects of High-Energy Neutrons on Advanced SOI MOSFETs; III. SOI Sensors and MEMS Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic FieldsOn-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams; Non-Standard FinFET Devices for Small Volume Sample Sensors; 3D SOI Elements for System-on-Chip Applications; Routes towards Novel Active Pressure Sensors in SOI Technology; IV. Nanodots, Nanowires and Nanofilms; Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on SiliconEffect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures; A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures; The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors; Keywords Index; Authors Index |
| Record Nr. | UNINA-9910822644703321 |
| Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2011] | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
| ||