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Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya
| Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya |
| Autore | Ghatak, Kamakhya P. |
| Pubbl/distr/stampa | Cham, : Springer, 2015 |
| Descrizione fisica | xl, 347 p. : ill. ; 24 cm |
| Altri autori (Persone) | Bhattacharya, Sitangshu |
| Soggetto topico |
78-XX - Optics, electromagnetic theory [MSC 2020]
74-XX - Mechanics of deformable solids [MSC 2020] 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
2D-quantized Structures
Einstein Relation in Semiconductors Under Strong Electric Field Einstein Relation in Super-lattices Under Magnetic Quantization III-V Low-dimensional Semiconductors Quantized Optoelectronic Semiconductors Quantum Wells of Doped Non-parabolic Semiconductors Semiconductors Under External Photo-excitation Ternary and Quaternary Semiconductors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0133632 |
Ghatak, Kamakhya P.
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| Cham, : Springer, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya
| Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya |
| Autore | Ghatak, Kamakhya P. |
| Pubbl/distr/stampa | Cham, : Springer, 2015 |
| Descrizione fisica | xl, 347 p. : ill. ; 24 cm |
| Altri autori (Persone) | Bhattacharya, Sitangshu |
| Soggetto topico |
00A79 (77-XX) - Physics [MSC 2020]
74-XX - Mechanics of deformable solids [MSC 2020] 78-XX - Optics, electromagnetic theory [MSC 2020] |
| Soggetto non controllato |
2D-quantized Structures
Einstein Relation in Semiconductors Under Strong Electric Field Einstein Relation in Super-lattices Under Magnetic Quantization III-V Low-dimensional Semiconductors Quantized Optoelectronic Semiconductors Quantum Wells of Doped Non-parabolic Semiconductors Semiconductors Under External Photo-excitation Ternary and Quaternary Semiconductors |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN00133632 |
|
Ghatak, Kamakhya P.
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| Cham, : Springer, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
| ||
Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 online resource (96 p.) |
| Soggetto topico | History of engineering and technology |
| Soggetto non controllato |
aspect ratio of channel cross-section
charge transport CMOS circuit conduction mechanism constriction Coulomb interaction DC and AC characteristic fluctuations device simulation dimensionality reduction drift-diffusion electron-phonon interaction fabrication field effect transistor gate-all-around geometric correlations heat equation hot electrons III-V Integration Kubo-Greenwood formalism lowest order approximation material properties metal gate modelling Monte Carlo MOSFETs nano-cooling nano-transistors nanodevice nanojunction nanowire nanowire field-effect transistors nanowire transistor noise margin fluctuation non-equilibrium Green functions nonequilibrium Green's function one-dimensional multi-subband scattering models Padé approximants phonon-phonon interaction power dissipation power fluctuation quantum confinement quantum electron transport quantum modeling quantum transport random dopant Richardson extrapolation Schrödinger based quantum corrections schrödinger-poisson solvers screening self-consistent Born approximation self-cooling silicon nanomaterials silicon nanowires statistical device simulation stochastic Schrödinger equations TASE thermoelectricity timing fluctuation variability variability effects work function fluctuation ZnO |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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