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Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya
| Heavily-Doped 2D-Quantized Structures and the Einstein Relation / Kamakhya P. Ghatak, Sitangshu Bhattacharya |
| Autore | Ghatak, Kamakhya P. |
| Pubbl/distr/stampa | Cham, : Springer, 2015 |
| Descrizione fisica | xl, 347 p. : ill. ; 24 cm |
| Altri autori (Persone) | Bhattacharya, Sitangshu |
| Soggetto topico |
78-XX - Optics, electromagnetic theory [MSC 2020]
74-XX - Mechanics of deformable solids [MSC 2020] 00A79 (77-XX) - Physics [MSC 2020] |
| Soggetto non controllato |
2D-quantized Structures
Einstein Relation in Semiconductors Under Strong Electric Field Einstein Relation in Super-lattices Under Magnetic Quantization III-V Low-dimensional Semiconductors Quantized Optoelectronic Semiconductors Quantum Wells of Doped Non-parabolic Semiconductors Semiconductors Under External Photo-excitation Ternary and Quaternary Semiconductors |
| Formato | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Titolo uniforme | |
| Record Nr. | UNICAMPANIA-VAN0133632 |
Ghatak, Kamakhya P.
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| Cham, : Springer, 2015 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Vanvitelli | ||
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Nanowire Field-Effect Transistor (FET)
| Nanowire Field-Effect Transistor (FET) |
| Autore | García-Loureiro Antonio |
| Pubbl/distr/stampa | Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
| Descrizione fisica | 1 electronic resource (96 p.) |
| Soggetto topico | History of engineering & technology |
| Soggetto non controllato |
random dopant
drift-diffusion variability device simulation nanodevice screening Coulomb interaction III-V TASE MOSFETs Integration nanowire field-effect transistors silicon nanomaterials charge transport one-dimensional multi-subband scattering models Kubo–Greenwood formalism schrödinger-poisson solvers DC and AC characteristic fluctuations gate-all-around nanowire work function fluctuation aspect ratio of channel cross-section timing fluctuation noise margin fluctuation power fluctuation CMOS circuit statistical device simulation variability effects Monte Carlo Schrödinger based quantum corrections quantum modeling nonequilibrium Green’s function nanowire transistor electron–phonon interaction phonon–phonon interaction self-consistent Born approximation lowest order approximation Padé approximants Richardson extrapolation ZnO field effect transistor conduction mechanism metal gate material properties fabrication modelling nanojunction constriction quantum electron transport quantum confinement dimensionality reduction stochastic Schrödinger equations geometric correlations silicon nanowires nano-transistors quantum transport hot electrons self-cooling nano-cooling thermoelectricity heat equation non-equilibrium Green functions power dissipation |
| Formato | Materiale a stampa |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione | eng |
| Altri titoli varianti | Nanowire Field-Effect Transistor |
| Record Nr. | UNINA-9910557553303321 |
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García-Loureiro Antonio
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| Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 | ||
| Materiale a stampa | ||
| Lo trovi qui: Univ. Federico II | ||
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